Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

Neudeck, Philip G.; Larkin, David J.; Starr, J.E.; Powell, J. A.; Salupo, Carl; Matus, L. G.

doi:10.1109/16.285038

Cited by 49 publications

(25 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Most 3C-SiC mesas films grown by this technique were free of DPB's with a reduced incidence of stacking faults. Diodes fabricated from these films exhibited the best blocking characteristics ever reported for 3C-SiC, but the remaining defects nevertheless rendered them significantly inferior to the 6H-SiC diodes in other 1 mm square regions of the same wafer [34].…”

Section: Impact Of Pre-growth Surface Treatments On Sic Epitaxial Growthmentioning

confidence: 90%

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

Neudeck

Powell

2004

Silicon Carbide

View full text Add to dashboard Cite

This article describes the initial discovery and development of new approaches to SiC homoepitaxial and heteroepitaxial growth. These approaches are based upon the previously unanticipated ability to effectively supress two-dimensional nucleation of 3C-SiC on large basal plane terraces that form between growth steps when epitaxy is carried out on 4H-and 6H-SiC nearly on-axis substrates. After subdividing the growth surface into mesa regions, pure stepflow homoeptixay with no terrace nucleation was then used to grow all existing surface steps off the edges of screw-dislocation-free mesas, leaving behind perfectly on-axis (0001) basal plane mesa surfaces completely free of atomic-scale steps.Step-free mesa surfaces as large as 0.4 mm x 0.4 mm were experimentally realized, with the yield and size of step-free mesas being initally limited by substrate screw dislocations. Continued epitaxial growth following step-free surface formation leads to the formation of thin lateral cantilevers that extend the step-free surface area from the top edge of the mesa sidewalls. By selecting a proper pre-growth mesa shape and crystallographic orientation, the rate of cantilever growth can be greatly enhanced in a web growth process that has been used to (1) enlarge step-free surface areas and (2) overgrow and laterally relocate micropipes and screw dislocations. A new growth process, named step-free surface heteroepitaxy, has been developed to achieve 3C-SiC films on 4H-and 6H-SiC substrate mesas completely free of double positioning boundary and stacking fault defects. The process is based upon the controlled terrace nucleation and lateral expansion of a single island of 3C-SiC across a step-free mesa surface. Experimental results indicate that substrateepilayer lattice mismatch is at least partially relieved parallel to the interface without dislocations that undesirably thread through the thickness of the epilayer. These results should enable realization of improved SiC homojunction and heterojunction devices. In addition, these experiments offer important insights into the nature of polytypism during SiC crystal growth.

show abstract

Section: Impact Of Pre-growth Surface Treatments On Sic Epitaxial Growthmentioning

confidence: 90%

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

Neudeck

Powell

2004

Silicon Carbide

View full text Add to dashboard Cite

show abstract

“…5,6 Recently, low defect density SiC on both Si and 6H-SiC substrates has been reported. [7][8][9] A review of current progress in heteroepitaxy is given in Refs. 1 and 4.…”

Section: Introductionmentioning

confidence: 99%

“…The large breakdown field ͑5ϫ that of Si͒ and saturated electron drift velocity ͑2ϫ that of Si͒ of SiCs polytypes also make it a suitable semiconductor for high power or high frequency applications. [1][2][3][4][5][6][7][8][9][10][11] Much of the current research in SiC crystal growth is driven by the need for high power switching in the public power industry. The use of SiC could reduce the size of power devices by over twenty times and allow the public power industry a fifty percent increase in the power carried over existing transmission lines.…”

Section: Introductionmentioning

confidence: 99%

Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

Tabib-Azar

Hubbard

Schnabel

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

We report on a mapping technique used to correlate the structure of defects with their electrical characteristics in semiconductors. Interesting results that directly and clearly show the influence of micropipes on the minority carrier diffusion length were obtained in both p- and n-type 6H–SiC. The method is based on electron-beam induced current (EBIC) measurements in planar structures. Values of hole diffusion length in defect free regions of n-type 6H–SiC, with a doping concentration of 1.7×1017 cm−3, ranged from 1.46 to 0.68 μm. These values were reduced to below 0.1 μm at the center of large defects. In addition, measurements on p-type 6H–SiC resulted in electron diffusion lengths ranging from 1.42 to 0.8 μm which also showed drastic reductions near defects. Our planar mapping technique measures diffusion lengths along a linescan. This linear map is then overlaid onto the EBIC image, allowing direct visualization of defects and their effect on minority carrier diffusion lengths.

show abstract

“…As reported the cubic crystalline SiCN (c-SiCN) film deposited on p-Si (1 0 0) substrate with the rapid thermal chemical vapor deposition (RTCVD) has wide band gap of 3.2-4.4 eV [9,10], which is larger than or comparable to b-SiC of 2.2 eV 6H-SiC of 2.9 eV, InP of 1.42 eV, GaAs of 1.519 eV, and GaN of 3.5 eV [11,12]. In addition, the epitaxial SiCN on Si substrate offers the advantages of economic Si material and very large scale integrated (VLSI) compatible processing.…”

Section: Introductionmentioning

confidence: 99%

A comparative study of lateral SiCN/porous silicon and vertical SiCN/porous silicon junctions for sensing ultraviolet light

Chou

2015

Solid-State Electronics

View full text Add to dashboard Cite

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

Cited by 49 publications

References 46 publications

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

A comparative study of lateral SiCN/porous silicon and vertical SiCN/porous silicon junctions for sensing ultraviolet light

Contact Info

Product

Resources

About