Electrical properties of electron irradiated thin polycrystalline CdSe layers

Abstract

Electrical properties of nonirradiated and electron-irradiated thin layers of CdSe, sandwiched between two gold electrodes, were investigated. Thin films of CdSe, prepared by thermal-vacuum evaporation on glass substrate at a temperature of 220 °C, were subjected to two sessions of irradiation with 7 MeV electrons to the fluences of 2×1015 and 4×1015 e/cm2, respectively. The current–voltage characteristics, recorded at temperatures in the range 150–350 K, showed that the Ohm’s law is followed at low-applied voltages, in both nonirradiated and irradiated CdSe layers. In the range of high-applied voltages, the space-charge-limited current (SCLC), controlled by a Gaussian trap distribution, placed in the vicinity of the Fermi level, has been identified as the dominant conduction mechanism. An analysis in the frame of SCLC theory allowed us to obtain the parameters characterizing the trap distribution and their changes induced by electron irradiation.

Electron-irradiation effects on CdSe thin films investigated by thermally stimulated current method

“…7,8 As expected, no detectable structural changes were observed after irradiation. 7,8 As expected, no detectable structural changes were observed after irradiation.…”

Recent Developments in One‐Dimensional Inorganic Nanostructures for Photodetectors

“…As an important II–VI semiconductor material, CdSe has attracted considerable attention due to its unique properties such as a direct bandgap of 1.7 eV and excellent photoelectrical characteristics that makes it a promising material for applications in photoelectronics and photovoltaics 91, 92. Lee and co‐workers fabricated photodetectors with individual single‐crystal CdSe nanoribbons, and studied systematically the photoresponse properties 128, 129, 82.…”

Guided CdSe Nanowires Parallelly Integrated into Fast Visible-Range Photodetectors

“…Therefore, it has attracted great research attention and has been considered promising in many fields 24 especially for solar energy conversion and optoelectronic applications. 25 Recently, Penner et al ( 26 ) reported a photodetector based on nanocrystalline CdSe nanowires arrays showing fast response times at a range of 20–40 μs but with relatively low gain (0.032–0.050). For single-crystalline CdSe nanowires, Wang et al ( 27 ) reported a photodetector showing rise and decay time constants of 34 and 230 μs, respectively.…”