2012 17th Opto-Electronics and Communications Conference 2012
DOI: 10.1109/oecc.2012.6276783
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Electrical properties of cuprous oxide thin films fabricated by ultrasonic spray pyrolysis

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Cited by 6 publications
(2 citation statements)
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“…The resistivity of the film is decreased for the increase of solution concentration, which attributes the increase in the carrier concentration. The low resistivity 2.19 × 10 2 Ω.cm and high carrier concentration 16.76 × 10 15 cm −3 obtained for the solution concentration of 0.1 M are well matched with the earlier work on cuprous oxide prepared by ultrasonic spray pyrolysis . This reduced electrical resistivity is considered to be caused by desorption of oxygen from the film surface .…”
Section: Resultsmentioning
confidence: 99%
“…The resistivity of the film is decreased for the increase of solution concentration, which attributes the increase in the carrier concentration. The low resistivity 2.19 × 10 2 Ω.cm and high carrier concentration 16.76 × 10 15 cm −3 obtained for the solution concentration of 0.1 M are well matched with the earlier work on cuprous oxide prepared by ultrasonic spray pyrolysis . This reduced electrical resistivity is considered to be caused by desorption of oxygen from the film surface .…”
Section: Resultsmentioning
confidence: 99%
“…While the electrical properties of AZO thin films obtained by spray pyrolysis [54] are on the order of that which are obtained through classical thin film processes such as PLD, as described in Table 1, the properties of spray pyrolysis copper oxide thin films differ a lot from that of the ones obtained by thermal oxidation. Depending on the spray system, deposition conditions and doping, Cu 2 O thin film have shown to exhibit Hall mobilities between 0.45 and 22 cm 2 V À1 s À1 with carrier concentrations ranging from 2.68 Â 10 15 up to 2.1 Â 10 17 cm À3 [19,[55][56][57].…”
Section: Typical Parameters Of Cu 2 O By Spray Pyrolysismentioning
confidence: 99%