Electrical properties of CuI films prepared by spin coating

Inudo, Shota; Miyake, Masao; Hirato, Tetsuji

doi:10.1002/pssa.201329319

Cited by 87 publications

(65 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…CuI has large band gap (3.1 eV), high hole mobility (0.2–2 cm 2 V −1 s −1 ), good chemical stability and low production cost . These unique properties make CuI as an excellent choice as a hole conductor.…”

Section: Dopant‐free Hole Transporting Materials For Pscsmentioning

confidence: 99%

Dopant‐Free Hole Transporting Materials for Perovskite Solar Cells

Rezaee

Liu

et al. 2018

Solar RRL

View full text Add to dashboard Cite

This article reviews various dopant-free hole transporting materials (HTMs) used in perovskite solar cells (PSCs) in three main categories including inorganic, polymeric, and small molecule HTMs. PSCs have undergone rapid progress, achieving power conversion efficiencies (PCEs) above 22%. With their low production cost and high efficiencies, PSCs are considered promising next-generation solar cell technology. In all developed architectures for PSCs, including planar and mesoscopic with conventional and inverted structures, HTMs play a significant role in determining the photovoltaic performance of PSCs. Using p-type dopants, however, is considered a common strategy to increase the hole conductivity of HTM, which is usually compensated by a more complicated fabrication procedure, higher production costs, and lower stability of PSC. Although several reviews on HTMs have been published, progress on dopant free HTMs needs to be reviewed and analyzed. Here, a review covering most of the published reports on dopantfree HTMs is presented, and the device structure and fabrication method, HTM layer deposition techniques, and the efficiency and the stability of PSCs are addressed during discussions in each main category. Finally, an outlook on stability and PCE growth in PSCs based on dopant-free HTMs is presented.

show abstract

Section: Dopant‐free Hole Transporting Materials For Pscsmentioning

confidence: 99%

Dopant‐Free Hole Transporting Materials for Perovskite Solar Cells

Rezaee

Liu

et al. 2018

Solar RRL

View full text Add to dashboard Cite

show abstract

“…It has been reported that the Cu vacancy (V Cu ) in CuI plays the role of the dominant native acceptor [28]. The evaporation of a trace amount of iodine from a CuI film that decreased the concentration of V Cu , and the hole concentration decreased accordingly [10]. The hole mobility exhibits similar temperaturedependent behaviour to the carrier concentration.…”

mentioning

confidence: 94%

“…Zhu et al reported that CuI thin films grown with a pulse laser deposition (PLD) technique exhibiting the resistivity of 0.1–1 Ωcm and a transmittance of about 60–80% in the 410–1000 nm range . Inudo et al reported CuI films formed by spin coating and subsequent annealing with typical resistivity of 0.3–5 Ωcm and mobility of 0.5–2 cm 2 V −1 s −1 . Compared with these reports, Tanaka et al obtained CuI films by vacuum evaporation techniques with the same transmittance as RF‐DC coupled magnetron sputtering, while the reported resistivity was 10 −2 Ωcm .…”

Section: Introductionmentioning

confidence: 99%

Effect of deposition temperature on transparent conductive properties of γ-CuI film prepared by vacuum thermal evaporation

Zhang

et al. 2015

Phys. Status Solidi A

View full text Add to dashboard Cite

Copper (I) iodide (CuI) films are grown on glass substrates with a direct vacuum thermal evaporation method, and the effect of substrate temperature on their photoluminescence and transparent conductive properties is discussed. The X‐ray diffraction (XRD) measurement identifies the polycrystalline CuI film has γ‐phase with (111) preferential growth direction. When the substrate temperature is optimised at 120 °C, the average transmittance is about 90% in the wavelength range of 410–1500 nm. The electrical properties measured by Hall effect show the lowest resistivity of 1.0 × 10−2 Ωcm with hole concentration of 3.0 × 1019 cm−3 and mobility of 25 cm2 V−1s−1. These results indicate that direct thermal deposition is a simple method to grow high quality p‐type CuI films.

show abstract

“…It was found that the resistivity of the film would increase with the I/Cu ratio. Inudo et al [11] had studied the electrical properties of the air or Ar annealed CuI films fabricated by spin coating. The prepared film showed a high hole concentration of 1 9 10 18 -1 9 10 19 cm -3 .…”

Section: Introductionmentioning

confidence: 99%

Electrical and luminescence properties of Zn2+ doped CuI thin films

Xia

Liu

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Zn 2? doped CuI thin films were prepared by vacuum evaporation technique. The influence of the dopant on crystalline, electrical and luminescence properties of the CuI thin films were investigated. An enhancement in crystallization and the shift of (111) peak were found in the Zn 2? doped CuI films. The native p-type semiconductor of CuI film changed to n-type one for doping concentration up to 2 mol%. Such change is due to the mechanism that the Zn 2? ions not only fill the Cu vacancies but also donate free electrons. For the n-type CuI films, the minimal resistivity and maximal electron concentration was found for the 4 mol% Zn 2? doped sample. All Zn 2? doped CuI thin films showed the 410 and 422 nm near-band emissions. The intensity of the 422 nm emission was significantly improved with 1 mol% Zn 2? doping. The observation can be explained by the increase of the donoracceptor pairs in the film.

show abstract

Electrical properties of CuI films prepared by spin coating

Cited by 87 publications

References 19 publications

Dopant‐Free Hole Transporting Materials for Perovskite Solar Cells

Dopant‐Free Hole Transporting Materials for Perovskite Solar Cells

Effect of deposition temperature on transparent conductive properties of γ-CuI film prepared by vacuum thermal evaporation

Electrical and luminescence properties of Zn2+ doped CuI thin films

Contact Info

Product

Resources

About