Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

Katamune, YÅ«ki; Takeichi, Satoshi; Ohtani, Ryota; Koizumi, Satoshi; Ikenaga, Eiji; Kamitani, Kazutaka; Sugiyama, Takeharu; Yoshitake, Tsuyoshi

doi:10.1007/s00339-019-2607-8

Cited by 5 publications

(12 citation statements)

References 34 publications

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“…ure is almost the same with those of experiments in UNCD / a-C:H films fabricated similarly by PLD [40,41] and CAPD [26,36] methods. In addition, the peak has been observed in a similar material Q-carbon that was discovered recently [42].…”

Section: A Xps Characterizationsupporting

confidence: 86%

“…sp 3 and sp 2 bonds, which largely affect the physical properties of the films. UNCD / a-C and UNCD / a-C:H films synthesized by CAPD have been studied up to the present, by taking the advantages of conventional diamonds, toward the applications not only to hard coatings [18][19][20][21][22] and thermoelectric conversion elements [23], but also to optoelectronic devices such as photovoltaics [24][25][26][27][28][29][30][31][32][33][34][35][36]. As mentioned above, UNCD / a-C:H films prepared by CAPD include more a-C and/or a-C:H fractions and GBs that would act as generation sources of photo-induced carriers, which might be a cause of extremely large light absorption coefficients excessing 10 5 cm −1 in the photon energy range of 3 to 6 eV [15].…”

Section: Introductionmentioning

confidence: 99%

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Evidence of hydrogen termination at grain boundaries in ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma

Nishikawa

2020

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ultranonocrystalline diamond / hydrogenated amorphous carbon composite thin films consist of three different components; ultrananocrystalline diamond crystallites, hydrogenated amorphous carbon, and grain boundaries between them. Since grain boundaries contain a lot of dangling bonds and unsaturated bonds, they would be a cause of carrier trap center degrading device performance in possible applications such as UV photo-detectors. We experimentally demonstrate hydrogen atoms preferentially incorporate at grain boundaries and terminate dangling bonds by means of several spectroscopic techniques. XPS measurements cannot detect quantitative transitions of sp 2 -and sp 3 -hybridized carbons in the films, resulting in 55-59 % of sp 3 contents. On the other hand, FT-IR and NEXAFS exhibit some variations of the amounts of certain carbon hybridization for sure. The former confirms the transformation from sp 2 to sp 3 hydrocarbons by ~10 % by additional hydrogenation, and the latter represents chemical configuration changes from π* C ≡ C and π* C = C to σ* C − H . These results can be an evidence of localized hydrogen at grain boundaries, which plays a part in terminating dangling bonds and unsaturated bonds, and hydrogenation can be an effective tool of an enhancement of photovoltaic performance in the above sensing applications.

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Section: A Xps Characterizationsupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Evidence of hydrogen termination at grain boundaries in ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma

Nishikawa

2020

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…28 This contribution might be due to the oxide impurities and the similar tendency was also observed in survey-scan and oxygen 1s (O 1s) XPS spectra (see Ref. 26 and Fig. S1 in supplemental material).…”

Section: Resultssupporting

confidence: 65%

“…The films doped with amount of boron enough to form σ* C-B should increase their electrical conductivities up to 2 × 10 −1 Ω -1 cm -1 owing to the created localized states in the optical gap. 26 Diodes with the films and the n-Si substrates also follow the VRH and photo-induced carriers may transport similarly to those with a small amount of boron incorporated. In any cases the carrier paths and the transport mechanisms are the same much or lesser, and the detail descriptions are provided in Ref.…”

Section: Resultsmentioning

confidence: 99%

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Boron-doping effects on local structures of semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films fabricated via coaxial arc plasma: an x-ray absorption spectroscopic study

Nishikawa¹

2021

Semicond. Sci. Technol.

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Ultrananocrystalline diamond / hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma possess a marked structural feature; diamond grains embedded in an a-C and a a-C:H matrices that are the largest constituents of the films. Since the amorphous nature distinctly yields much larger light absorption coefficients as well as a generation source of photo-induced carriers with UV rays, these films can be potential candidates for deep-ultraviolet photodetector applications by proper engineering. P-type conductions of the films have been realized by doping boron in experimental conditions and their electrical characteristics were investigated recently. This work that utilized near-edge X-ray absorption fine structure spectroscopy reveals that bonding state σ* C-B of diamond surfaces are formed preferentially and can be an origin of an enhancement of electrical conductivities, by correlating the results with the above-mentioned investigation, and structural distortion would be caused at an early stage of the doping. Further doping into the films lessens the amount of unsaturated bonds such as π* C ≡ C and π* C = C , resulting in stabilization of the whole film structures. Our work suggests a fundamental case model of boron-doping effects on the films and a potential for an improvement of device capabilities consisting of the films as photovoltaics.

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Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures

et al. 2020

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Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

Cited by 5 publications

References 34 publications

Evidence of hydrogen termination at grain boundaries in ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma

Evidence of hydrogen termination at grain boundaries in ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films synthesized via coaxial arc plasma

Boron-doping effects on local structures of semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite thin films fabricated via coaxial arc plasma: an x-ray absorption spectroscopic study

Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures

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