Electrical properties of boron-doped hydrogenated amorphous silicon and n-type GaAs heterojunction

Abstract

Electrical properties of (p)aSi:H-(n)GaAs heterojunction were investigated by measuring current-voltage and capacitance-voltage characteristics. The experimental results are interpreted in accordance with a generalized a-c junction model. The built-in potential of the heterojunction and the gap-state density in the chemical vapor deposition (p)aSi:H were obtained from the capacitance-voltage characteristics.