Electrical properties of BaSnO3 in substitution of antimony for tin and lanthanum for barium

Huang, Taohong; Nakamura, Tetsurō; Itoh, Makoto; Inaguma, Yoshiyuki; Ishiyama, Osamu

doi:10.1007/bf00375264

Cited by 38 publications

(33 citation statements)

References 10 publications

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“…Our values of the resistivity for BLSO poly specimens match reasonably well with those of from Ref. 22. For the crystals, the resistivity values at RT are more than three orders of magnitude lower than those for the poly specimens.…”

supporting

confidence: 89%

High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

Luo

Sirenko³

et al. 2012

Applied Physics Letters

178

146

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We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98 La 0.02 SnO 3 crystals with the n-type carrier concentration of ∼8-10×10 19 cm -3 is found to be ∼103 cm 2 V -1 s -1 at room temperature, and the precise measurement of the band gap Δ of a BaSnO 3 crystal shows Δ=4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices. a) Author to whom correspondence should be addressed. Electronic mail: sangc@physics.rutgers.edu 2 Transparent conducting oxides (TCOs), exhibiting the contraindicative properties of optical transparency in the visible region and high DC electrical conductivity, are widely utilized as optical window electrodes in photovoltaic devices, liquid crystal displays and solar energy conversion devices. [1][2][3] There have been significant attempts to find alternative TCO materials to replace indium tin oxide due to its soaring price, and new TCOs such as doped ZnO and SnO 2 have been, in fact, already utilized. On the other hand, most of TCOs that have been investigated so far are associated with band gaps significantly less than 4 eV, so they do not transmit ultraviolet (UV) light.For example, the band gaps of SrTiO 3 (STO), ZnO, In 2 O 3 , and SnO 2 are 3.25, 3.3, 2.9, and 3.6 eV, respectively. 4-7 Thus, the discovery of TCOs with band gaps > 3.6 eV is central to enhance the efficiency of, for example, solar energy harvesting.Furthermore, the epitaxial all-perovskite multilayer heterostructures based on STO have recently attracted much attention due to the multiplicity of advantageous physical properties of perovskites. These all-perovskite multilayer heterostructures have great potentials for innovative micro-and nanoelectronic devices. 8,9 However, the mobility of doped STO is low at room temperature (RT) (~11 cm 2 V -1 s -1 ), 10 and the instability of oxygen content in doped oxides such as oxygen-deficient STO is often a detrimental issue inducing fatigue and degradation. 11 Therefore, the critical matter of the development of all-perovskite multilayer devices is finding new perovskite materials exhibiting high carrier mobility near RT and good oxygen stability.Herein, we report that La-doped perovskite BaSnO 3 (BSO) exhibits high carrier mobility with a large band gap, and thus is a promising candidate for transparent conductor applications with possible use in epitaxial all-perovskite multilayer devices.Alkaline earth stannates, with the formula of ASnO 3 (A=Ca, Sr and Ba), are widely used in the electronic industry for their optimal dielectric and gas-sensing properties. 12-14 BSO has an ideal cubic perovskite structure, and is an insulator with a valence band derived from orbitals of π-symmetry (mainly of oxygen 2p-character) and a conduction band with dominant Sn 5s-character. 15 T...

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supporting

confidence: 89%

High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

Luo

Sirenko³

et al. 2012

Applied Physics Letters

178

146

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“…Barium stannate doped with La or Sb has been thoroughly investigated as an n-type conductor in previous studies [8][9][10][11][12][13][14]. Electron carriers move in the conduction band composed of Sn5s-O2p * anti-bonding orbitals, which are derived from the Sn-O-Sn 3D network [15,16].…”

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confidence: 99%

High-temperature thermoelectric properties of La-doped BaSnO3 ceramics

Yasukawa

Kono²,

Ueda

et al. 2010

Materials Science and Engineering: B

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“…22 In order to have electrical conduction in BaSnO 3 , both Ba and Sn sites were doped to form compounds like (Ba,La)SnO 3 and Ba(Sn,Sb)O 3 in polycrystalline or thin film forms. [23][24][25][26][27] However, the reported electrical mobility in the thin film was relatively low, less than 2 cm 2 (Vs) -1 and the conductivity reached at most 500  -1 cm -1 . 26,27 As those reported transport properties might not be intrinsic, possibly due to, e.g., grain boundary scattering or off-stoichiometry, the growth of high quality single crystals of doped BaSnO 3 and the study of their intrinsic physical properties are of high interest.…”

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confidence: 99%

Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature

et al. 2012

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Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications, ranging from passive transparent conductive windows to active thin film transistors. suggest that the doped BaSnO 3 system holds great potential for realizing all perovskite-based, transparent high-temperature high-power functional devices as well as highly mobile two-dimensional electron gas via interface control of heterostructured films.

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Electrical properties of BaSnO3 in substitution of antimony for tin and lanthanum for barium

Cited by 38 publications

References 10 publications

High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

High-temperature thermoelectric properties of La-doped BaSnO3 ceramics

Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature

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