Electrical properties of annealed a-SiC:H thin films

Characterizations of pulsed laser deposited SiC thin films

“…The results of the work presented here also support earlier studies performed to investigate the crystallization of amorphous SiC films prepared by different film growth techniques [43][44][45].…”

Study of optical sensors of the form A l/a-SiC:H/c-Si(n) with high sensitivity

“…From Figure 2(a) it is clear that the critical value where the loss mechanism takes place is about 3500Å, suggesting also lower value for L p for this case in comparison for the one of T a =600 o C. This result would be expected, since the optoelectronic properties of a-SiC:H for T a =600 o C are superior than that of T a =400 o C [13]. Using the above methodology, it has been observed that L p =3340 Å, a value that appears to be very close to that found in a previous work (3350 Å) [8].…”

“…Taking into consideration that the a-SiC:H/c-Si(n) heterojunction is one sided, since the active density of localized gap states in a-SiC:H for T a =600 o C is two orders of magnitude greater than c-Si(n) substrate [13], it can be concluded that w h →0. Also, the magnitude of w s can be estimated from the relation:…”

“…Depending on the preparation technique or on deposition conditions the properties of a-SiC:H can be modified so that a suitable combination that requires each application can be achieved. The high absorption in the blue region of the visible spectrum is very attractive for manufacturing optical sensors using a-SiC:H. Even though the optimization of such optical sensors has been mainly focused on the improvement of optoelectronic properties of a-SiC:H thin films by using different preparation technique or by changing deposition conditions [8][9][10][11][12], very few works studied further quality improvement of aSiC:H by thermal annealing [13,14]. On the other hand, although a-SiC:H is an interesting material for photosensing applications in the low wavelength and UV range of the spectrum, very few works have been published on the optoelectronic properties of Metal/a-SiC:H Schottky diodes [8,15].…”

SIMS and auger investigation of thin a-SiC and a-SiC:H films by Up-Down sputtering DC magnetron, impact on optical properties

“…They offer many potential applications in many kinds of optoelectronic devices, such as solar cells [2][3][4], temperature and gas sensors [5,6], protective coatings [1] full-color electroluminescent display [7], and light emitting diodes [5,[8][9]. By varying the carbon concentrations in a-SiC films, the optical gap (Eg) can be continuously tuned in a wide range, which makes it useful for devices design and performances [10], and thus the electrical and optical properties can be manipulated to better suit the application in photovoltaic heterojunction devices [8,11]. After deposition by d.c. magnetron sputtering, the films are generally amorphous and can be transformed into the crystalline state by annealing at elevated temperatures (>1200°C) in an argon atmosphere, which may also improve the a-SiC:H quality [4,10].…”