Electrical Properties of Acceptor Doped BaTiO3

Abstract

Electrical properties of acceptor (Mn, Mg or Mn + Mg)-doped BaTiO 3 ceramic have been studied in terms of oxygen vacancy concentration, various doping levels and electrical degradation behaviors. The solubility limit of Mn on Ti sites was confirmed to be close to or less than 1.0 mol%. Oxygen vacancy concentration of Ba(Ti 0.995−x Mg 0.005 Mn x )O 2.995−y (x = 0, 0.005, 0.01) was estimated to be ∼50 times greater than that of the un-doped BaTiO 3 . The leakage current of 0.5 mol% Mn-doped BaTiO 3 was stable with time, which was much lower than that of the un-doped BaTiO 3 . The BaTiO 3 specimen co-doped with 0.5 mol% Mg and 1.0 mol% Mn showed the lowest leakage current below 10 −10 A. It was confirmed that leakage currents of Mg-doped and un-doped BaTiO 3 under dc field are effectively suppressed by Mn co-doping as long as the Mn doping level is greater than Mg contents.

Effects of Mn-doping on TSDC and degradation of BaTiO3

“…O ) and behave as an acceptor impurity [2][3][4][5][6][7][8][9][10]. The increase in oxygen vacancy concentration by acceptor doping (Mn 3+ , Mg 2+ ) suppresses BaTiO 3 to be reduced as MLCC materials with Ni-electrodes.…”

“…The increase in oxygen vacancy concentration by acceptor doping (Mn 3+ , Mg 2+ ) suppresses BaTiO 3 to be reduced as MLCC materials with Ni-electrodes. However, the oxygen vacancy is the most mobile ionic species in BaTiO 3 lattices and the electro-migration of charged oxygen vacancies in dc fields is accountable for the electrical degradation of BaTiO 3 -based ceramic capacitors [2,6,7,[11][12][13][14].…”

“…Defect chemistry and electrical properties of Mn-doped BaTiO 3 have been extensively studied by numerous researchers [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The valence state of Mn ion is known to change from Mn 2+ to Mn 3+ or Mn 4+ with increasing oxygen activities, while Mg ion is constant by divalent [2,3,[6][7][8][9][10]16].…”

Study the structural and magnetic properties of rare-earth ions (La and Gd) doped Ba0.9575Ca0.0025Ti0.80685Mn0.002475Nb0.002475Zr0.1782O3 (BCTMNZ) ceramics

“…Yuan et al reported that the coreshell structure was formed for Nb-doped BaTiO 3 resulted from a low diffusivity of Nb 5þ ions into BaTiO 3 when grain growth was inhibited and Nb 5þ reported as donor ion and reduce the leakage current. 20,21 Parjansri et al 22 synthesized the Nb 5þ doped Ba 0:90Ca0:10 Zr 0:10 Ti 0:90 O 3 ceramics by using solid-state reaction method and reported that the average grain size values vary in the range 12:62-1:86 m. In their paper they reported that Nb doping lead to decrease the ferroelectric, piezoelectric, and electromechanical properties. The Mn 4þ ion changes the electrical and dielectric properties of barium titanate ceramics and also has a beneficial effect on the reduction of dissipation factor.…”

Effect of fabrication routes on the microstructure, the dielectric and ferroelectric properties of the Mn-doped BaTiO3 ceramics

“…Manganese, as an acceptor dopant, is usually used to improve the properties of the BaTiO 3 -based ceramics. Microstructure and electrical properties of Mn-doped BaTiO 3 have been extensively studied by numerous researchers [3][4][5][6][7][8][9][10][11][12][13][14][15]. For the donor-doped positive temperature coefficient of resistance (PTCR) ceramics, manganese depresses the grain size and enhances the electrical resistivity near the Curie temperature of BaTiO 3 [16][17][18][19][20][21][22][23].…”