Electrical properties of a-Ge-Se-In thin films

Sharma, Ishu; Tripathi, S. K.; Monga, Alka; Barman, P. B.

doi:10.1016/j.jnoncrysol.2008.01.006

Cited by 25 publications

(10 citation statements)

References 24 publications

(37 reference statements)

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“…At lower ratios, such as the GeSe4In10 system, the effect of Ge-Se cooperation is swift to set back in and a depiction of this is provided in Figure 6 by the GeSe4In10 clusters. This trend is also on a par with observations that increasing Ge/Se ratios caused the replacement of Se-Se and Se-In bonds by Ge-Ge, Ge-Se and Ge-In bonds [28] while increasing In content saturates Se-In bonds at the expense of Ge [6]. …”

Section: Binding Energy Decomposition and Molecular Orbital Interactionssupporting

confidence: 79%

“…Two properties regarding the amorphous Ge-Se matrix are of particular importance in applications: the material's optical band gap [1,6] (for example, Ge-Se vibrational spectroscopy [7] has revealed the instrumental role of the system's band gap on the electrical properties of Ge-Se based semiconductors) and the effect of alloying additions in the Ge-Se matrix. Typically, the introduction of Bi or Pb in a Ge-Se glass induces a change in the electrical conductivity from p-to n-type, accompanied by a reduction of the electrical resistance [8].…”

Section: Open Accessmentioning

confidence: 99%

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The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Antipas

Mangiorou

Hristoforou

2015

Metals

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Abstract:The atomic environments of two chalcogenide glasses, with compositions GeSe4In10 and GeSe4In15, were studied via Reverse Monte Carlo and Density Functional Theory. Indium content demoted Ge-Se bonding in favor of Se-In while the contribution of Se-Se in the first coordination shell order was faint. Upon transition to the richer In glass, there was formation of rich Ge-centered clusters at radial distances further than 4 Å from the RMC box center, which was taken to signify a reduction of Ge-Se interactions. Cluster coordination by Se promoted stability while, very conclusively, In coordination lowered cluster stability by intervening in the Ge-Se and Se-Se networks.

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Section: Binding Energy Decomposition and Molecular Orbital Interactionssupporting

confidence: 79%

Section: Open Accessmentioning

confidence: 99%

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Antipas

Mangiorou

Hristoforou

2015

Metals

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“…A wide glass-forming region offers ample opportunity for controlling physical properties by tailoring chemical compositions [12,13]. Detailed study of Ge 20 Se 80Àx In x (x ¼ 0, 5,10,15,20) thin films has already been reported by Sharma et al [14][15][16]. The nonlinear and photosensitive properties together offer numerous applications to a number of integrated optical functions.…”

Section: Introductionmentioning

confidence: 99%

Correlation between the physical and optical properties of thea-Ge–Se–In–Bi system

Sharma¹,

Tripathi²,

Barman³

2008

Philosophical Magazine

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A correlation between physical and optical properties of the Ge 20 Se 70Àx In 10 Bi x (x ¼ 0, 2, 4, 6, 8, 10) glassy system is presented. The density of the alloys increases with an increase of the Bi content, which accounts for the concurrent increase in refractive index. The molar volume (V m ) has been calculated from the densities and follows the same trend as that of the optical gap. A linear relation has been found between the cohesive energy (calculated using a chemical-bond approach) and the optical gap (experimental and theoretical). The cohesive energy and the optical gap decrease with increase in Bi content. A decrease of electronegativity also accompanies the decrease of optical gap. The relationship between the optical gap and the chemical composition in the a-Ge-Se-In-Bi glasses has been examined using two parameters: the average heat of atomization ðH s Þ and the average coordination number (hri). The mean bond energy (hEi) and the glass transition temperature (T g ) are calculated using the Tichy-Ticha approach. hEi shows maxima at chemical thresholds. Thickness-dependence studies of the optical gap and the refractive index show that optical gap increases with increased thickness, whereas no significant change has been found in the refractive index for all compositions.

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“…The effect of indium addition on Ge-Se glassy alloys was studied by the author for its optical (linear and non-linear), electrical and physical properties previously [8,9]. Chalcogens can be doped by many elements.…”

Section: Introductionmentioning

confidence: 99%

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors

Sharma

Sunder

2018

Materials Science-Poland

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Glass forming ability of lone-pair semiconductors was analyzed for (x = 0, 2, 4, 6, 8, 10) system. Values of lone pair electrons L were calculated using average coordination number of valence electrons. These values were found to decrease, as the system was moving towards the rigid region. L > 3 values showed vitreous state. Deviation of the stoichiometry confirmed the chalcogen-rich region. A linear correlation was found between the mean bond energy and glass transition temperature. Chemical Bond Approach model was applied to calculate the cohesive energy of the system. A linear relationship was found to exist between the cohesive energy and the theoretical band gap, calculated using Shimakawa relation. A decrease in both parameters was explained on the basis of average stabilization energy and electronegativity of the system. The density values were found to increase and may account for higher refractive index of the system. Large Bohr radius of the Bi atom accounted for an increase in the polarizability. Other parameters viz. degree of covalency, packing density, compactness, molar volume, free volume percentage, excess volume and polaron radius were also calculated. An effort was made to correlate the effect of Bi addition to Ge12Se76 - xAs12Bixlone-pair semiconductor on the basis of the structure of the glassy matrix or the connectedness of the material.

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Electrical properties of a-Ge-Se-In thin films

Cited by 25 publications

References 24 publications

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Correlation between the physical and optical properties of thea-Ge–Se–In–Bi system

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors

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Electrical properties of a-Ge-Se-In thin films

Cited by 25 publications

References 24 publications

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

Correlation between the physical and optical properties of thea-Ge–Se–In–Bi system

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge12Se76-xAs12Bixglassy semiconductors

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Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors