Electrical Properties Engineering of Sputtered Indium Gallium Zinc Oxide Semiconductor Thin Films
Khairi. M. Abusabee,
Salem. O. Elhamali,
Khalid. M. Alajel
et al.
Abstract:The influence of deposition conditions and laser annealing on the electrical properties of indium gallium zinc oxide (IGZO) semiconducting thin films was investigated. 50 nm thick IGZO films were deposited by radio frequency (RF) magnetron sputtering at room temperature and subsequently laser annealed in ambient conditions to enhance the IGZO electrical properties. Excimer laser annealing (ELA) was conducted by Krypton fluoride (KrF) excimer laser (λ= 248 nm) with single pulse over a range of fluences up to 17… Show more
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