Electrical properties and valence band structure of GeSe_xTe_1−x single crystals

Abstract

The anomalous composition dependence of the carrier transport properties of Ge1−y(Se0.2Te0.8)y in the range y=0.495 − 0.510 has been analyzed at room temperature by means of a two‐carrier model. The close agreement between the experimental and computational results confirms the existence of two valence bands in α‐GeSexTe1−x which are produced by the rhombohedral distortion of the lattice at low temperature.