Electrical properties and relaxation behavior of Bi0.5Na0.5TiO3-BaTiO3 ceramics modified with NaNbO3

Xu, Qi; Lanagan, Michael T.; Luo, Wei; Zhang, Lin; Xie, Juan; Hao, Hua; Cao, Minghe; Yao, Zhonghua; Liu, Hanxing

doi:10.1016/j.jeurceramsoc.2016.03.011

Cited by 111 publications

(30 citation statements)

References 55 publications

(66 reference statements)

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“…The short‐range hopping of oxygen vacancies might generate the dielectric relaxation polarization. After oxygen annealing, the hole concentration increases following the reaction:

\frac{1}{2} {normalO}_{2} + V_{O}^{∙ ∙} \leftrightarrow {normalO}_{O}^{\times} + 2 h^{∙}

p ‐type conduction is exhibited, and this result is different from those in previous studies related to the electron or oxygen vacancies conduction …”

Section: Resultscontrasting

confidence: 86%

“…Some studies suggested that the relaxation nature was associated with the oxygen defects in BNT‐based materials . Other results indicated that the relaxation could be relative to the intrinsic electronic conduction . Nevertheless, our results showed that the dielectric relaxation and conduction were associated with oxygen defects, electrons, or holes, depending on the mol ratio of Bi/Na ions.…”

Section: Introductioncontrasting

confidence: 55%

“…Zang et al proposed that the highly polarizable entity originates from the PNRs . Although some research has been reported that the nucleation of PNRs occurs near the Burns temperature, T B (see Figure ), Vögler et al found that, in BNT‐based ceramics, with decreasing temperature the formation of PNRs occurs over a broad temperature range starting at around 720°C . In our case, T B is about 465°C for x = 0.495 (see Figure B and Table ), and the temperature of the shoulder appearance occurs at 480°C‐575°C.…”

Section: Resultsmentioning

confidence: 46%

“…For x = 0.495, the increase in permittivity occurs relatively slowly as the frequency decreases (Figure A). No loss peaks are observed in the measured frequency range in Figure B, except the sharp increase at low frequency and high temperature, which may be related to the oxygen ionic conduction …”

Section: Resultsmentioning

confidence: 87%

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Dielectric relaxation and electrical conduction in (Bi_xNa_1−x)_0.94Ba_0.06TiO₃ ceramics

Jing

et al. 2017

J Am Ceram Soc

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The dielectric relaxation and electrical conduction were investigated in (BixNa1−x)0.94Ba0.06TiO3 (Abb. xBNBT6, x = 0.5, 0.495, 0.485, and 0.475) ceramics prepared by solid state reaction. With a decrease in x, the dielectric properties of the ceramics decreased, whereas the electrical conduction increased, resulting in a transition from insulator to oxide‐ions conductor. When x = 0.475, the ceramics exhibited large conductivity (~10−3 S cm−1 at 575°C) and low activation energy (~0.45 eV), indicating their potential application in solid oxide fuel cells. A mixed conduction mechanism with oxide‐ions, electrons, and holes was proposed. With a decrease in x from 0.495 to 0.475, it was found that the p‐type conduction was switched to n‐type conduction. The dielectric relaxation of the x = 0.495 sample was associated with short‐range hopping of oxygen vacancies. However, the dielectric properties of the x = 0.485 and 0.475 samples can be explained by Maxwell‐Wagner interface relaxation.

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“…The short‐range hopping of oxygen vacancies might generate the dielectric relaxation polarization. After oxygen annealing, the hole concentration increases following the reaction:

\frac{1}{2} {normalO}_{2} + V_{O}^{∙ ∙} \leftrightarrow {normalO}_{O}^{\times} + 2 h^{∙}

p ‐type conduction is exhibited, and this result is different from those in previous studies related to the electron or oxygen vacancies conduction …”

Section: Resultscontrasting

confidence: 86%

Section: Introductioncontrasting

confidence: 55%

Section: Resultsmentioning

confidence: 46%

Section: Resultsmentioning

confidence: 87%

See 2 more Smart Citations

Dielectric relaxation and electrical conduction in (Bi_xNa_1−x)_0.94Ba_0.06TiO₃ ceramics

Jing

et al. 2017

J Am Ceram Soc

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“…The resistivity of Mn0‐N is much smaller than that of Mn0‐A at the same measuring temperature, indicating the higher electron concentration in Mn0‐N in accordance with the Hall‐effect measurement. The activation energies calculated by the Arrhenius law from grain and grain boundary contribution are 0.70 and 0.75 eV, respectively, which demonstrates that the conduction mechanism is predominately controlled by electrons . The activation energy value of Mn0‐N is much smaller than that of Mn0‐A ceramics.…”

Section: Resultsmentioning

confidence: 89%

Design of p‐type NKN‐based piezoelectric ceramics sintered in low oxygen partial pressure by defect engineering

et al. 2020

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The reduction‐resistant properties of piezoelectric ceramics are of great importance for multilayer monolithic structures based on base metal inner electrodes, particularly for recently reported niobate‐based lead‐free perovskites. In this letter, the Hall‐effect measurement and impedance analysis indicate that conventional (K,Na)NbO3 (NKN)‐based ceramics exhibit an n‐type electronic conduction. Rapid increase in the concentrations of oxygen vacancies and electrons is responsible for severe degradation of resistivity and piezoelectric properties as sintered in N2. By comparison, p‐type NKN‐based ceramics by Mn doping exhibit excellent electrical properties (d33 = 368 pC/N, d33∗ = 643 pm/V, tanδ = 0.019, and IR = 39.9 GΩ · cm) in N2 sintering atmosphere, as well interpreted by a series of proposed defect chemistry equations. The experimental results suggest that an introduction of the p‐type conduction behavior should be an effective strategy to enabling NKN‐based ceramics and Cu/Ni electrodes to well co‐fire in a weakly reducing atmosphere.

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Regulating effect of the halogen atoms on the cofacial dinuclear Schiff base complexes: Synthesis, spectroscopy, electrochemistry, and DFT calculations

Huang,

Jiao,

Yang

et al. 2024

Applied Organom Chemis

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The present study reports the synthesis and characterization of two new halogenated Schiff base copper (II) derivatives, namely [CuII2(3‐Cl‐Salmphen)2] (Cu‐Cl‐Salmphen) and [CuII2(3‐Br‐Salmphen)2] (Cu‐Br‐Salmphen), which were characterized by UV–Vis, FT‐IR, 1H‐NMR, and 13C‐NMR spectroscopy. Single crystal structural analysis revealed that each complex contains two crystallography independent, distorted copper centers, where each Cu center exhibits the same coordination environment with N2O2 donor atoms from two different ligands. To investigate the substitution effect of halogen atoms on the properties of the complexes, the non‐halogenated isomer [CuII2(H‐Salmphen)2] (Cu‐H‐Salmphen) was introduced for comparison. The differences between the halogenated and the non‐halogenated analogues were compared through spectroscopic, electrochemical, DFT, and TD‐DFT theoretical calculations. The optical experimental results indicated that the introduction of halogen atoms decreased the energy gap between the ground and excited states, leading to enhanced optical absorption capabilities of the compounds. Electrochemical tests showed that the halogenated analogues exhibited better electrochemical performance, and with the increase in an atomic number of the halogen atoms, the compounds displayed a gradual increase in cyclic voltammetry peak areas, diffusion coefficients, and conductivities. Theoretical calculations revealed that the introduction of halogen atoms simultaneously expanded the conjugated area of the molecules, decreased the HOMO‐LUMO energy levels of the complexes, and strengthened the intramolecular interactions. Furthermore, the potential mechanism of the tuning effect of halogen atoms on the charge transfer process was proposed.

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Electrical properties and relaxation behavior of Bi0.5Na0.5TiO3-BaTiO3 ceramics modified with NaNbO3

Cited by 111 publications

References 55 publications

Dielectric relaxation and electrical conduction in (Bi_xNa_1−x)_0.94Ba_0.06TiO₃ ceramics

Dielectric relaxation and electrical conduction in (Bi_xNa_1−x)_0.94Ba_0.06TiO₃ ceramics

Design of p‐type NKN‐based piezoelectric ceramics sintered in low oxygen partial pressure by defect engineering

Regulating effect of the halogen atoms on the cofacial dinuclear Schiff base complexes: Synthesis, spectroscopy, electrochemistry, and DFT calculations

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Electrical properties and relaxation behavior of Bi0.5Na0.5TiO3-BaTiO3 ceramics modified with NaNbO3

Cited by 111 publications

References 55 publications

Dielectric relaxation and electrical conduction in (BixNa1−x)0.94Ba0.06TiO3 ceramics

Dielectric relaxation and electrical conduction in (BixNa1−x)0.94Ba0.06TiO3 ceramics

Design of p‐type NKN‐based piezoelectric ceramics sintered in low oxygen partial pressure by defect engineering

Regulating effect of the halogen atoms on the cofacial dinuclear Schiff base complexes: Synthesis, spectroscopy, electrochemistry, and DFT calculations

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Product

Resources

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Dielectric relaxation and electrical conduction in (Bi_xNa_1−x)_0.94Ba_0.06TiO₃ ceramics

Dielectric relaxation and electrical conduction in (Bi_xNa_1−x)_0.94Ba_0.06TiO₃ ceramics