Electrical properties and microstructure of Y-doped BaTiO3 ceramics prepared by high-energy ball-milling

Park, K.; Kim, J.-G.; Lee, K.-J.; Cho, W.S.; Hwang, Woon Suk

doi:10.1016/j.ceramint.2006.04.007

Cited by 21 publications

(15 citation statements)

References 20 publications

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“…We propose in 2#-1, occupation rate of K þ and Bi 3þ in A sites of prevoskite structure is too low to enhance T c but that R 25 has been increased by defects formed from volatilization of KBT. Comparison can be made to the NBT system [17,18]. Hence to inhibit the volatilization, a temperature maintaining procedure was added in the sintering schedule of 2#-2 and 3#-2.…”

Section: Methodsmentioning

confidence: 99%

Resistance reduction effect of potassium bismuth titanate doping in yttrium–manganese co-doped medium Curie temperature barium titanate lead free ceramics through improved synthesis process

Zhao

Cao

2015

Materials Science in Semiconductor Processing

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Section: Methodsmentioning

confidence: 99%

Resistance reduction effect of potassium bismuth titanate doping in yttrium–manganese co-doped medium Curie temperature barium titanate lead free ceramics through improved synthesis process

Zhao

Cao

2015

Materials Science in Semiconductor Processing

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“…The resistivity at room temperature and the resistance rising rate through the Curie temperature are the main parameters of PTCR effect. In PTCR applications, the electrical properties require that the resistance rising rate through the curie temperature is higher than 10 4 unit, and the resistivity at room temperature is less than 100 X cm [15].…”

Section: Introductionmentioning

confidence: 99%

The preparation of fine-grained positive temperature coefficient resistance with superior electrical properties

Chen¹,

Gong²,

Zhang³

et al. 2013

Microelectronic Engineering

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“…and La 3? [6][7][8], or pentavalent ions, such as Nb 5? and Ta 5? [9,10] are added to incorporate at the Ba 2? or Ti 4?…”

Section: Introductionmentioning

confidence: 99%

Preparation and positive temperature coefficient of resistivity behavior of BaTiO3–BaBiO3–Bi0.5Na0.5TiO3 ceramics

Zhang

Yang

2015

J Mater Sci: Mater Electron

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In this study, as a promising material for leadfree positive temperature coefficient of resistivity ceramics, (1 -x -y)BaTiO 3 -xBaBiO 3 -y(Bi 0.5 Na 0.5 )TiO 3 (x = 0.001, 0.002, 0.003; y = 0, 0.002, 0.004, 0.006, 0.01) samples were prepared by the conventional mixed oxide method. All the samples were sintered in air atmosphere for 1 h. X-ray diffraction, scanning electron microscope and resistivity-temperature measurement were used to study the crystal structure, microstructure and resistivitytemperature dependence. The results revealed that proper amount of BaBiO 3 doping not only decreased the room temperature resistivity, but also increased the Curie temperature. Its optimal doping content was finally chosen as 0.2 mol%. And with an increase of BNT content, both the Curie temperature and the room temperature resistivity increased. When BaBiO 3 = 0.2 mol%, BNT = 0.6 mol%, the Curie temperature was 153°C and the room temperature resistivity was 1512 X cm. When the BNT content increased to 1 mol%, the Curie temperature increased to 157°C but the room temperature resistivity increased sharply to 4.0 9 10 5 X cm.

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Electrical properties and microstructure of Y-doped BaTiO3 ceramics prepared by high-energy ball-milling

Cited by 21 publications

References 20 publications

Resistance reduction effect of potassium bismuth titanate doping in yttrium–manganese co-doped medium Curie temperature barium titanate lead free ceramics through improved synthesis process

Resistance reduction effect of potassium bismuth titanate doping in yttrium–manganese co-doped medium Curie temperature barium titanate lead free ceramics through improved synthesis process

The preparation of fine-grained positive temperature coefficient resistance with superior electrical properties

Preparation and positive temperature coefficient of resistivity behavior of BaTiO3–BaBiO3–Bi0.5Na0.5TiO3 ceramics

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