2019
DOI: 10.3390/nano9050697
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Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer

Abstract: Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La2O3 passivation layer deposition cycles improves the surface smoothness of HfO2/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La2O3 passivation layer can affect the shift of flat band voltage (VFB), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, signific… Show more

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Cited by 13 publications
(2 citation statements)
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“…In addition, the XPS spectrum of the precursor GeS 2 for Ge 3d was compared with that of Li 6+ x Sb 1– x Ge x S 5 I ( x = 0.5 and 0.75), as shown in Figure S7. The XPS spectrum of GeS 2 in Figure S7a indicates the coexistence of Ge 2+ (29.8 eV, blue) and Ge 4+ (31.8 eV, green), while the Ge 4+ state was dominant (72%). The chemical state of Ge was changed during the synthesis process, forming GeS 4 4– at 30.9 eV in Li 6+ x Sb 1– x Ge x S 5 I, suggesting substitution of Ge into the SbS 4 3– tetrahedra.…”
mentioning
confidence: 99%
“…In addition, the XPS spectrum of the precursor GeS 2 for Ge 3d was compared with that of Li 6+ x Sb 1– x Ge x S 5 I ( x = 0.5 and 0.75), as shown in Figure S7. The XPS spectrum of GeS 2 in Figure S7a indicates the coexistence of Ge 2+ (29.8 eV, blue) and Ge 4+ (31.8 eV, green), while the Ge 4+ state was dominant (72%). The chemical state of Ge was changed during the synthesis process, forming GeS 4 4– at 30.9 eV in Li 6+ x Sb 1– x Ge x S 5 I, suggesting substitution of Ge into the SbS 4 3– tetrahedra.…”
mentioning
confidence: 99%
“…Hafnium oxide (HfO 2 ) with its high thermal, chemical and mechanical stability, as well as its high refractive index and dielectric constant is remarkably appealing for new nanostructure architectures like nanoporous or nanotube (NT) arrays and a large range of applications [5][6][7][8][9][10][11][12]. Having into account the emerging application of anodic TiO 2 nanotubes in DSCs, the question arises about the applicability of self-ordered arrays of anodic HfO 2 for the same purpose.…”
Section: Introductionmentioning
confidence: 99%