Electrical properties and electronic structure of Cu1−xZnxInSe2 and Cu1−xZnxInS2 single crystals

Божко, В. В.; Новосад, Олексій; Parasyuk, O.V.; Khyzhun, O.Y.; Вайнорюс, Неймантас; Nekrošius, A.; Vertelis, Vilius; Kažukauskas, V.

doi:10.1016/j.jpcs.2015.02.012

Cited by 5 publications

(2 citation statements)

References 36 publications

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“…The authors attributed this effect to thermal expansion altering the electronic structure of the semiconductor host as well as the ligand field strength on the dopant ions. [28] This interpretation should also account for present observations on the Zn 0.7 À Cu 0.3 In 1 Se 2 QDs, as evidenced by the findings from Bozhko et al [29] who also demonstrated the temperature dependence of electrical properties and electronic structure in the Cu 1-x Zn x InSe 2 solid solution; that is, a change in the dominant electrical conductivity mechanism involves different charge carrier transport mechanisms, all of which occur via localized states that are positioned in a narrow energy band near the Fermi level. As proposed previously, there is a high possibility that different temperature behaviors of copper deficient and Zn-doped Cu 0.3 In 1 Se 2 QDs support specific radiative transition pathways.…”

Section: Resultssupporting

confidence: 79%

Investigating the Mechanism by Which Intragap States Tailor Light Emission: Case of Copper Deficient and Zn Doped Cu−In−Se Quantum Dots**

Xie

Sheng

et al. 2023

Eur J Inorg Chem

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The large structural tolerance of I–III–VI group quantum dots (QDs) to off‐stoichiometry allows their photoluminescence properties to be adjusted via doping, thereby enabling application in different fields. However, the photophysical processes underlying their photoluminescence mechanism remain significantly unknown. In particular, the transition channels of CuInSe2 QDs, which are altered by intrinsic and extrinsic intragap states, remain poorly reported. Herein, we investigated the photophysical processes associated with intragap states via electrochemical and optical techniques by using copper deficient Cu−In−Se QDs as well as Zn doped Cu−In−Se QDs. When the Cu/In molar ratios of Cu−In−Se QDs increased from 0.3 : 1 to 0.9 : 1, the photoluminescence spectra displayed a red‐shift from 700 nm to 1050 nm. Although there was a blue‐shift after the introduction of Zn2+ dopants in Cu−In−Se QDs, a significant red‐shift occurred (from 660 nm to 760 nm) when the Zn/Cu molar ratios decreased from 0.7 : 0.3 to 0.3 : 0.7. The Gaussian deconvolution results of the photoluminescence spectra and the band gap derived from absorption spectra by fitting supported the fact that the optical transition channels are dependent on the Cu/In and Zn/Cu molar ratios. After the introduction of the Zn2+ ions, the alloyed‐resultant blue‐shift of the emission spectra was observed, primarily due to the enlarged band gap; however, the radiative recombination of prominent intrinsic intragap states is still observed; and only a small proportion of the band‐edge exciton undergoes recombination for the sample with low Zn content. Cyclic voltammetry measurements revealed well‐defined extrinsic ZnCu intragap states (Zn substitution on Cu sites) and intrinsic Cux (x= 1+/2+) states in the band gap. The results presented here provide a better understanding of the varying effects of dopant on photoluminescence in terms of I–III–VI group QDs.

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Section: Resultssupporting

confidence: 79%

Investigating the Mechanism by Which Intragap States Tailor Light Emission: Case of Copper Deficient and Zn Doped Cu−In−Se Quantum Dots**

Xie

Sheng

et al. 2023

Eur J Inorg Chem

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“…In our previous publications we have proposed the single crystal growth technology of CuInS 2 -ZnIn 2 S 4 and CuInS 2 -ZnIn 2 Se 4 crystals, presented results of their X-ray structural analysis and investigations of the physical and electrical properties in the steady state mode at $ 30 K and the room temperature [18][19][20][21]. In the present paper we will focus on the photoconductivity transient properties at different temperatures in the temperature range from $ 30 up to 100 K as they are influenced by the cation-vacancy defects.…”

Section: Methodsmentioning

confidence: 99%