2024
DOI: 10.1021/acs.jpcc.4c01809
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Electrical Properties and Current-Illumination Characteristics of the SiC/GaN Lateral Heterostructure

Enling Li,
Ke Qin,
Zhen Cui
et al.

Abstract: The construction of lateral heterostructures (LHSs) has the potential to adjust the electrical properties and current-illumination characteristics through interfacial interactions, providing new possibilities for the development of electron and photoelectric devices. In this research, the electronic and electrical properties as well as the current-illumination characteristics of the SiC/GaN LHSs have been investigated using first principles. The band structure analysis indicates that the band gap of the SiC/Ga… Show more

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