Electrical properties and back contact study of CZTS/ZnS heterojunction

Boutebakh, F. Z.; Zeggar, M. Lamri; Attaf, N.; Aida, M.S.

doi:10.1016/j.ijleo.2017.06.080

Cited by 49 publications

(16 citation statements)

References 61 publications

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“…Similar to CIGS, CdS and ZnS buffer layers have been used for CZTS solar cells. [471][472][473] However, since CZTS devices have similar interfacial properties but lower efficiency than CIGS, this review does not go into detail and instead refers the reader to other references. 474…”

Section: Cigs Solar Cellsmentioning

confidence: 99%

“…Besides CIGS, n-type and p-type wide-gap chalcogenide materials have been researched for Cu 2 ZnSn(S,Se) 4 solar cells (i.e., CZTS, CZTS 1– x Se x ), with quaternary kesterite crystal structures (see section ) and similar material parameters as CIGS. Similar to CIGS, CdS, and ZnS buffer layers have been used for CZTS solar cells. − However, since CZTS devices have similar interfacial properties but lower efficiency than CIGS, this Review does not go into detail, and instead, we refer the reader elsewhere …”

Section: Applicationsmentioning

confidence: 99%

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Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Cigs Solar Cellsmentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…[9] The transportation of holes will be suppressed due to such contact barrier, resulting an increasing R S and the roll-over phenomenon in the I-V curve of the solar cells. [7,10] As a solution, a thin MoSe 2 interfacial layer (less than 10 nm) existing between absorber layer and Mo film can convert the Schottky contact to a quasi-Ohmic contact. [7,11] However, CZTS(e)/Mo interfaces are thermodynamically unstable during annealing and easily form secondary phases and resulting voids that contribute to the V OC deficiency.…”

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confidence: 99%

Tuning the Work Function of the Metal Back Contact toward Efficient Cu₂ZnSnSe₄ Solar Cells

Wang

Guo

et al. 2020

Solar RRL

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Kesterite structured Cu 2 ZnSn(S x Se 1-x) 4 (CZTSSe) is a promising, low-cost photovoltaic material with appropriate photoelectronic properties. [1] However, a long time has passed since a record energy conversion efficiency of 12.6% was achieved in 2013. [2] The V OC deficit, defined as the difference between the absorber bandgap and the measured open-circuit voltage, is accepted widely as the main factor limiting further improvement

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“…The increasing demand of quaternary compounds for the fabrication of thin film solar cells is due to their potential [7][8][9]. Non-toxic earth-abundant quaternary compound materials, such as CZTS, CZTSe [10][11][12][13], CFTS, CFTSe [14], CBTS, CBTSe [1,15] and their alloys are emerging and promising replacement of chalcopyrite (CIGS, CIGSe) absorbers [16] by substituting low-cost contents, such as Ga with Sn and In with Zn or Ba in chalcopyrite absorbers [17][18][19]. Among quaternary compounds, Cu 2 BaSnS 4 (CBTS) is one of the propitious compounds for an effective light absorber material due to its earth-abundant and nontoxic nature, suitable wide-optical band gap of 1.7-2.1 eV and large absorption coefficient, α >10 4 cm −1 [1,16,20].…”

Section: Introductionmentioning

confidence: 99%

Modelling of novel-structured copper barium tin sulphide thin film solar cells

et al. 2019

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In this work, a novel structured Cu 2 BaSnS 4 (CBTS)/ZnS/Zn(O, S) photovoltaic device is proposed. A nontoxic, earth-abundant and auspicious quaternary semiconductor compound copper barium tin sulphide (Cu 2 BaSnS 4) is used as an absorber layer. We propose a novel Zn(O, S) buffer layer for a high-power conversion efficiency (PCE) of CBTS-based thin film photovoltaic cells. Solar cell capacitance simulator software is used for device modelling and simulations are performed under a 1.5 AM illumination spectrum. The proposed device is investigated by means of numerical modelling and optimized the parameters to maximize its efficiency. Promising optimized functional parameters had been achieved from the proposed structure with back surface field layer with a PCE of 18.18%, a fill factor of 83.45%, a short-circuit current of 16.13 mA cm −2 and an open-circuit voltage of 1.3 V. The promising results give an imperative standard for possible manufacturing of high efficiency, eco-friendly inorganic CBTS-based photovoltaic cells.

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Electrical properties and back contact study of CZTS/ZnS heterojunction

Cited by 49 publications

References 61 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Tuning the Work Function of the Metal Back Contact toward Efficient Cu₂ZnSnSe₄ Solar Cells

Modelling of novel-structured copper barium tin sulphide thin film solar cells

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Electrical properties and back contact study of CZTS/ZnS heterojunction

Cited by 49 publications

References 61 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Tuning the Work Function of the Metal Back Contact toward Efficient Cu2ZnSnSe4 Solar Cells

Modelling of novel-structured copper barium tin sulphide thin film solar cells

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Product

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Tuning the Work Function of the Metal Back Contact toward Efficient Cu₂ZnSnSe₄ Solar Cells