Electrical Piezoeffect in Semiconducting BiSb Alloys due to Anisotropy of Electron Mobility

Tolutis, R.

doi:10.1002/pssb.2221850214

Cited by 5 publications

(6 citation statements)

References 6 publications

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“…The measurements of electrical piezoeffect in tellurium-doped semiconducting n-BiSb crystals at liquid nitrogen temperature show that under stretch in the direction of the binary C 2 axis the electron repopulation ratio is n 1 /n L > 0.9 at −ε xx ≈ 0.15%. Here n 1 is electron concentration in L 1 -valley and n L is electron concentration in all L 1 -, L 2 -, and L 3 -valleys [3]. This means that at liquid nitrogen temperature with ±ε xx ≈ 0.25% the repopulation of electrons into one or two valleys should be complete.…”

Section: Resistivity Of Uniaxially Deformed Polycrystallinementioning

confidence: 99%

“…[1] and in magnetoplasma waves at 77 K in Refs. [2,3]. It was shown that the anisotropy and orientation of the Fermi surface hole "ellipsoid" and electron "ellipsoids" remain unchanged in a wide range of deformations.…”

Section: Introductionmentioning

confidence: 99%

“…The stretch in the direction of C 2 axis causes the transitions of electrons from L 2 -and L 3 -valleys to L 1 -valley with high resulting anisotropy of electron mobility. The electrical piezoeffect caused by the deformation-induced anisotropy of electron mobility in the semiconducting Bi 1−x Sb x was measured by the crossed induction coil technique [3].…”

Section: Introductionmentioning

confidence: 99%

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Transverse magnetoresistance of uniaxially deformed thin polycrystallinen- Bi films

Tolutis¹

2009

Lithuanian J. Phys.

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Large influence of uniaxial stretch (strain) S and compression P on transverse and perpendicular resistivity ρ and magnetoresistance (MR) of polycrystalline n-Bi films was investigated. The calculations were performed on the basis of polycrystalline Bi thin film model and electron intervalley repopulation in deformed film crystallites. The calculations show that in n-Bi films the influence of P on ρ can be many times larger because T -holes in Bi films significantly reduce the effect of deformation. It was found that S and P cause considerably different dependences of ρ and MR on magnetic field strength. The effect of P on the ρ and MR is of opposite sign as compared to S and can be larger than that of S. In strong non-quantizing magnetic field region the transverse ρ appears to be independent of deformation. The investigated high-quality 1.5 µm thick Bi films consisting of up to 200 µm length crystallites were deposited on non-crystalline substrate and annealed at critical temperature close to the film melting temperature. The experimental results confirm the theoretical predictions.

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Section: Resistivity Of Uniaxially Deformed Polycrystallinementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transverse magnetoresistance of uniaxially deformed thin polycrystallinen- Bi films

Tolutis¹

2009

Lithuanian J. Phys.

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“…The electrical piezoeffect measurements in tellurium-doped semiconducting n-Bi-Sb crystals at liquid nitrogen temperature show that under strain in the direction of the binary C 2 axis for +ε xx > 0.1% the electron repopulation rate n 1 /(3n) is > 0.8. Here n 1 is electron concentration in valley L 1 and 3n is electron concentration in valleys L 1 , L 2 , and L 3 [3].…”

Section: Longitudinal Resistivity Of Deformed Polycrystalline N-bi Filmsmentioning

confidence: 99%

“…The strain in direction of C 2 axis causes the transitions of electrons from valleys L 2 and L 3 to valley L 1 with high anisotropy of electron mobility. The electrical piezoeffect caused by the deformation-induced anisotropy of electron mobility in the semiconducting Bi 1−x Sb x was measured by the crossed induction coil technique [3].…”

Section: Introductionmentioning

confidence: 99%

Longitudinal magnetoresistance of uniaxially deformed thin polycrystalline Bi films

Tolutis¹

2006

Lithuanian J. Phys.

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The large longitudinal magnetoresistance (MR) of high quality uniaxially deformed 1.5 µm thick polycrystalline bismuth films deposited in vacuum on non-crystalline substrate and annealed at critical temperatures was investigated. The experimental results are interpreted on the basis of polycrystalline Bi thin film model. The data suggest that in tellurium doped Bi films the influence of uniaxial deformation on MR can be up to 400%. It was found that strain and compression cause a considerably different dependence of MR on magnetic field, which is explained in terms of electron intervalley repopulation in polycrystalline film crystallites.

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Large effect of the deformation on magnetoresistance of stretched and compressed thin polycrystalline Bi films

Tolutis¹,

Balevičius²

2009

Physica Status Solidi (a)

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Substantial influence of uniaxial stretch S and compression P on resistivity ρ and magnetoresistance (MR) of high‐quality polycrystalline Bi films consisting of up to 200 μm length crystallites was observed. The investigated 1.5 μm thick films were deposited on non‐crystalline substrate and annealed at critical temperature close to the film melting temperature. The experimental results are interpreted on the basis of improved polycrystalline Bi thin film model, including the electron intervalley repopulation in deformed film crystallites. It was found that S and P cause different dependence of ρ and MR on the magnetic field strength. The effect of P on ρ and MR is of opposite sign as compared to S and is larger than that for S. In a strong non‐quantizing magnetic field region the transverse ρ appeared to be independent of the deformation. The calculations show that in n‐Bi films the effect of P on ρ at 77 K can be many times larger because the T‐holes in Bi films significantly reduce the effect of deformation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electrical Piezoeffect in Semiconducting BiSb Alloys due to Anisotropy of Electron Mobility

Cited by 5 publications

References 6 publications

Transverse magnetoresistance of uniaxially deformed thin polycrystallinen- Bi films

Transverse magnetoresistance of uniaxially deformed thin polycrystallinen- Bi films

Longitudinal magnetoresistance of uniaxially deformed thin polycrystalline Bi films

Large effect of the deformation on magnetoresistance of stretched and compressed thin polycrystalline Bi films

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