Electrical performance of static induction transistor with transverse structure

Abstract

A novel static induction transistor with transverse surface gate structure was designed and successfully fabricated in this paper. Its basic electrical characteristics and frequency performance was investigated in depth. The optimum technological parameters such as source-gate space and epitaxial layer thickness for obtaining excellent frequency performance and high blocking voltage capacity were represented and discussed in detail. The main advantage of this work is that the performances of device were improved with simple structure and technological processes. The experimental and simulated results demonstrate the trans-conductance gm and gate-source breakdown voltage BV GS of the transverse type SIT increase from 60 to 87 ms and 20 to 26 V, respectively, in addition to obtaining higher than 100 MHz operating frequency under relatively simple technology processes compared with those of traditional vertical SIT.