Electrical, optical, and photoelectric properties of electron-irradiated indium-doped cadmium sulfide single crystals

Efficiency Enhancement of Cu(In,Ga)(S,Se)2 Solar Cells by Indium-Doped CdS Buffer Layers

“…In heterojunction CIGSSe/CdS solar cells, interface characteristics play a crucial role in achieving high efficiency. Previous research has shown that surface defects, possibly formed on the CIGSSe surface during the fabrication process, are easy to observe but hard to eliminate. ,,− These interface defects are deep acceptor defects and act as traps, limiting the device performance due to serious interface recombination. , In Section , we observed that using In-doped CdS buffers enhanced efficiency due to improved interface properties. To understand the underlying mechanism responsible for the improved interface quality, a SCAPS simulation was performed.…”

“…The variations of GE band emission intensity, shown in Figure 3, are consistent with the changes of carrier concentrations obtained by the Hall effect measurements (Table 1), indicating that In Cd defects indeed exist and their concentration depends on the In doping level. The yellow emission (YE, ∼2.03 eV) band, which corresponds to the transition from I Cd to valence band and/or the I Cd −V Cd complex defect, 47,48 can be clearly observed in all In-doped samples, which may suggest that the presence of I Cd or I Cd −V Cd complex defect is strongly related to the In incorporation. The increased YE intensity due to dopant effects has also been observed in Er-doped CdS films.…”

“…The PL spectra are shown in Figure . The green emission (GE, ∼2.36 eV), in general, is associated with the sulfur interstitial ( I S ) to the conduction band, sulfur vacancy ( V S ) to valence band, and the donor acceptor pair recombination. ,,, In addition to the near band edge emission of CdS, Davidyuk et al reported that the In Cd donors may also be responsible for the modification of PL GE intensity, supported by the increase in intensity of this luminescence band with increasing the In doping level in CdS samples. The variations of GE band emission intensity, shown in Figure , are consistent with the changes of carrier concentrations obtained by the Hall effect measurements (Table ), indicating that In Cd defects indeed exist and their concentration depends on the In doping level.…”

Synthesis and characterization of indium doped cadmium sulfide nanoribbons

“…The broad red emission band is too weak to be resolved in comparison with the intensity of the other emissions at room temperature (293 K). It is known [16] that In doped into a CdS single crystal enters the lattice as an impurity, substituting the Cd on the cation sub-lattice to form shallow donor centres In Cd . These shallow donor centres are apparently responsible for the additional extrinsic maxima in photoconductivity around 510-520 nm observed at room temperature (to be shown in the later part).…”

The formation of CdS nanocrystals in silica gels by gamma-irradiation and their optical properties

“…Over the past decade, much attention has been paid to the nanoscale semiconductor structure and quantum dot materials from the viewpoints of scientific interest and their applications [1][2][3][4][5], since these materials exhibit many novel physical and chemical properties. In particular, II-VI semiconductor nanocrystals such as CdS and CdSe show potential applications in photoelectric, biological labelling and light emitting devices [6][7][8][9]. By incorporating semiconductor nanoparticles into polymer, glass, or ceramic matrix materials, their interesting optical properties including absorption, luminescence and nonlinearity as well as related applications [1,5,[10][11][12] have been studied.…”