Abstract:A comprehensive investigation on noise analysis for two different low-power devices, namely Z-shaped Horizontal Pocket and hetero stack tunnel field-effect transistors (TFETs), is presented within low- to high-frequency range. The simulation is performed for these structures in the presence of uniform and Gaussian trap distributions at the interface of Silicon and oxide materials for three different noise namely flicker noise, generation recombination (GR) noise, and diffusion noise with the help of the Sentau… Show more
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