Electrical Modeling of Long-Wavelength VCSELs for Intrinsic Parameters Extraction

Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers

“…21,28 Details of the growth process, of the design and of the characterization of these devices have been reported elsewhere. [29][30][31][32] The VCSELs have the same threshold current of 2.2 mA and the volume of their active region is 1.3 μm 3 .…”

“…While that rough approximation in this case can lead to misinterpretation of the data, it is still routinely used. 20,21 A second criticism relates to the fact that recombination rates at low injection levels cannot be accurately determined by the turn-on delay. Although this is generally correct, this approach remains valid at high injection levels, as obtained under lasing conditions.…”

The Vertical-Cavity Surface Emitting Laser (VCSEL) and Electrical Access Contribution

“…Secondly, we will be interested in the dynamic behavior of the VCSEL. This approach is based on the comparison between the rate equations and an electrical equivalent circuit to obtain the relationships between intrinsic parameters and equivalent circuit elements (Tucker & Pope, 1983), (Bacou et al, 2010). The electrical equivalent circuit approach consists in describing the physical phenomena occurring into the VCSEL structure by resistive, inductive and capacitive elements.…”

“…By knowing that a VCSEL has a -40dB/decade slope, the -60dB/decade slope is assumed to be induced by the electrical access topology (Fig.27). This effect has been modeled by using the tranfer matrix (T-matrix) formalism as presented by A. Bacou in (Bacou et al, 2009) and (Bacou et al, 2010). The method using the T-matrix consists in the splitting of the VCSEL chip into two cascaded subsystems representing the electrical access and the optical cavity, respectively.…”

“…It can be completed by modeling and by measurements, though special attention must be paid to the electrical contribution which hugely modifies the frequency response (O'Brien et al, 2007) (Rissons et al, 2003). Moreover, the current advance in VCSEL technology (intrinsic structure and chip submount) requires a constant review of the model and the characterization before the VCSEL utilization (Bacou et al, 2010). Hence we suggest to dedicate a chapter to the VCSEL technology, that aims at giving an overview of the advances, the physical behavior, and its various structures including the electrical access regarding VCSELs.…”