Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects

Rigorous Electrical Modeling of Through Silicon Vias (TSVs) With MOS Capacitance Effects

“…7-9, respectively. These figures compare the TSV C −V plots obtained by this analysis with those obtained by using the FDA [20], [21]. The TSV modeled in these figures was filled with Cu.…”

“…PARAMETRIC STUDY The effect of different TSV physical parameters on its capacitance was studied in [20] and [21] based on FDA analysis. This section presents the results of the parametric study based on the detailed MOS capacitance analysis (without the FDA) described in the previous section.…”

“…The importance of modeling the depletion region in EM simulations was studied in [20] and [21]. It was observed that that the depletion region can be utilized to reduce the signal loss in TSVs.…”

“…These models neglect the voltage-dependent MOS capacitance associated with TSVs. The first analytical models of the MOS capacitance effect in TSVs by analytically solving Poisson's equation assuming full depletion approximation (FDA) were reported in [20] and [21]. A similar modeling of the TSV capacitance with FDA has been presented in [22] along with measurement and device simulation results.…”

Closed‐form impedance model for annular through‐silicon via pairs in three‐dimensional integration

“…The common configurations include cylindrical TSVs [3][4][5][6][7], coaxial TSVs [8][9][10], tapered TSVs [11][12][13] and annular TSVs [8,[13][14][15].…”