2018
DOI: 10.1103/physrevb.98.155319
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Electrical manipulation of semiconductor spin qubits within the g -matrix formalism

Abstract: We discuss the modeling of the electrical manipulation of spin qubits in the linear-response regime where the Rabi frequency is proportional to the magnetic field and to the radio-frequency electric field excitation. We show that the Rabi frequency can be obtained from a generalized g-tensor magnetic resonance formula featuring a g-matrix and its derivative g with respect to the electric field (or gate voltage) as inputs. These matrices can be easily calculated from the wave functions of the qubit at zero magn… Show more

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Cited by 61 publications
(94 citation statements)
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“…We have checked that this conclusion still holds when solving the model in a converged basis set, as well as for more realistic device layouts such as those investigated in Ref 29…”
mentioning
confidence: 64%
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“…We have checked that this conclusion still holds when solving the model in a converged basis set, as well as for more realistic device layouts such as those investigated in Ref 29…”
mentioning
confidence: 64%
“…This is supported by a symmetry analysis: When E 0 = 0, the system has three mirror planes perpendicular to x, y, z, which, as shown in Ref. 29, implies that the Rabi frequency is zero to first order in B and E ac .…”
Section: A General Equationsmentioning
confidence: 78%
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