Electrical Isolators Based on Tunneling Magnetoresistance Technology

Reig, C.; Cubells-Beltrán, María-Dolores; Ramı́rez, D.; Freitas, P. P.; Freitas, P. P.

doi:10.1109/tmag.2008.2002384

Cited by 17 publications

(9 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The work of PannetierLecouer and co-workers, also focused on this idea [30]. In parallel, Le Phan and colleagues [31,32] and then C. Reig and co-workers [33], demonstrated de possibility of using MTJ sensors for this purpose…”

Section: Electric Current Monitoring At the Ic Levelmentioning

confidence: 97%

See 1 more Smart Citation

GMR Based Sensors for IC Current Monitoring

Reig

Cubells-Beltrán

2013

Giant Magnetoresistance (GMR) Sensors

View full text Add to dashboard Cite

Abstract. The Giant MagnetoResistance (GMR) effect is a magnetic coupling mechanism that can be obtained in multilayer structures of few nanometers thick. In these devices, and at room temperature, the resistance is a function of the external magnetic field, at optimal levels for being used as sensors. Since the GMR effect was reported, scientists and engineers have dedicated their effort to this topic. This way, after two decades, a a very good knowledge of the GMR underlying physics together with notable designs of GMR based devices are nowadays available. They were initially used in the read heads of hard drives, but the constant evolution that this technology has experienced has open new fields of application, mainly related to the measurement of small magnetic fields using miniaturized devices, such as biotechnology and microelectronics.Regarding the microelectronics case, these sensors can be potentially used in those scenarios that require a detection or measurement of nonintrusive power by the indirect measurement of the magnetic field.In this chapter, an overview to the current research regarding the application of GMR sensors in the measurement of electrical currents at the integrated circuit (IC) level is drawn. In this particular case is important to take account of particular parameters of the GMR devices such as the sensing structures, the geometric arrangement and implementation of the sensors, the considered linear range, undesired couplings, biasing, hysteresis, temperature drifts, ... We have also described some cases of success describin particular applications of these devices. Finally, some aspects related to the monolithic integration of GMR devices onto standard CMOS engineered chips are also considered in this chapter.

show abstract

Section: Electric Current Monitoring At the Ic Levelmentioning

confidence: 97%

“…In order to overcome these difficulties, the possibility of using GMR based full bridges in order to design analog magnetically coupled isolators was analyzed in [33]. To demonstrate the capability of GMR devices for acting as analogue …”

Section: Analogue Isolatorsmentioning

confidence: 99%

GMR Based Sensors for IC Current Monitoring

Reig

Cubells-Beltrán

2013

Giant Magnetoresistance (GMR) Sensors

View full text Add to dashboard Cite

show abstract

“…The GMR devices used in the present work were fabricated at the clean room facilities of INESC-MN at Lisbon. The details www.ietdl.org of the fabrication process of such devices can be found in [8,10]. Since SV and MTJ have demonstrated to be the preferred GMR technologies in a major range of linear applications, both technologies have been considered in the present study.…”

Section: Gmr-based Sensing Devicesmentioning

confidence: 99%

“…Le Phan , et al developed MTJ‐based current sensors for IC testing applications [7]. We have also experienced these particular properties of MTJ‐based devices as the basis for analogue isolators [8]. SV structures have also been proposed for IC current in a differential configuration [9].…”

Section: Introductionmentioning

confidence: 99%

Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology

Marcellis

Cubells-Beltrán

Reig

et al. 2014

IET Circuits, Devices & Systems

View full text Add to dashboard Cite

In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 mu m technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 mu A have been resolved in this way.Peer ReviewedPostprint (published version

show abstract

“…Large size, heaviness, high power consumption, and complex wireless communication technology are critical issues that need to be resolved 19 . Current sensors based on GMI and giant magnetoresistance (GMR) have been reported in literature, and are preferred because of their high sensitivity, wide frequency range, small size, low power consumption, and facile compatibility with CMOS technologies 20 – 25 . The development of this kind of current sensors has been facilitated by the progress in both theoretical and technological methods over several years.…”

Section: Introductionmentioning

confidence: 99%

Development of chipless, wireless current sensor system based on giant magnetoimpedance magnetic sensor and surface acoustic wave transponder

Kondalkar

Yang

et al. 2018

Sci Rep

View full text Add to dashboard Cite

A chipless, wireless current sensor system was developed using a giant magnetoimpedance (GMI) magnetic sensor and one-port surface acoustic wave (SAW) reflective delay line for real-time power monitoring in a current-carrying conductor. The GMI sensor has a high-quality crystalline structure in each layer, which contributes to a high sensitivity and good linearity in a magnetic field of 3–16 Oe. A 400 MHz RF energy generated from the interdigital transducer (IDT)-type reflector on the one-port SAW delay line was used as an activation source for the GMI magnetic sensor. The one-port SAW delay line replaces the presently existing transceiver system, which is composed of thousands of transistors, thus enabling chipless and wireless operation. We confirmed a large variation in the amplitude of the SAW reflection peak with a change in the impedance of the GMI sensor caused by the current flow through the conductor. Good linearity and sensitivity of ~0.691 dB/A were observed for currents in the range 1–12 A. Coupling of Mode (COM) modeling and impedance matching analysis were also performed to predict the device performance in advance and these were compared with the experimental results.

show abstract

Electrical Isolators Based on Tunneling Magnetoresistance Technology

Cited by 17 publications

References 10 publications

GMR Based Sensors for IC Current Monitoring

GMR Based Sensors for IC Current Monitoring

Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology

Development of chipless, wireless current sensor system based on giant magnetoimpedance magnetic sensor and surface acoustic wave transponder

Contact Info

Product

Resources

About