Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe+ ions

Vo, V.T.; Koon, K.L.; Hu, Zhirun; Dharmasiri, C.N.; Subramaniam, S.C.; Rezazadeh, A.A.

doi:10.1063/1.1712030

Applied Physics Letters

2004

DOI: 10.1063/1.1712030

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Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe+ ions

V.T. Vo¹,

K.L. Koon

Zhirun Hu

et al.

Abstract: Electrical and structural investigations of Ag-based Ohmic contacts for In Al As ∕ In Ga As ∕ In P high electron mobility transistors

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Cited by 2 publications

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“…Nanomultilayered materials have become one of the significant research topics in recent years because of their potential applications in X-ray reflectors [1,2] , thin film magnetic recording media [3,4] , optoelectronics coatings [5] , wear resistance coatings [6,7] , strained quantum-well field-effect transistors [8] , and Micro-Electro-Mechanical System (MEMS) structures [9] . On the nano-meter scale, due to a high density of interfaces in multilayered system, large proportions of atoms are in close proximity with hetero-interfaces.…”

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confidence: 99%

Asymmetric Intermixing and the Stress Buildup in Ni/Al-typed Nanomultilayer with Different Characteristic Scales

Liu

Gengrong

et al. 2017

Rare Metal Materials and Engineering

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In order to detect scale-dependent interfacial evolution of metallic heterostructure during the deposition at room temperature, Ni/Al-typed nanomultilayers were prepared as a function of the periodicity and Ni:Al modulated ratio. Combined with X-ray diffraction, real-time plate curvature measurements by multi-beam optical stress sensor (MOSS) were employed to study the stress buildup so as to speculate interfacial characteristics during the growth process. Results show that with anisotropic nanocrystalline structure within the sub-layers, the multilayers possess asymmetrical interfaces, which is a result of dissymmetrical diffusion of Ni to Al lattice near the interface. Specially, for the smallest periodicity with the lowest Ni:Al ratio, above asymmetric intermixing behaviors turns to be aggravated by a promotion effect.

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mentioning

confidence: 99%

Asymmetric Intermixing and the Stress Buildup in Ni/Al-typed Nanomultilayer with Different Characteristic Scales

Liu

Gengrong

et al. 2017

Rare Metal Materials and Engineering

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Anomalous electronic transport in metallic nanomultilayer at all length scales: Influence of grain boundary and interface boundary

Liu

2008

J. Mater. Res.

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Scale-dependent microstructure and electronic transportation of Ni/Al-type nanomultilayers as a function of the bilayers number, the modulated ratio, and the periodicity were investigated. The deposited multilayers have anisotropic nanocrystalline structure and asymmetrical interfaces. This special interfacial feature is the result of asymmetrical diffusion of Ni to Al lattice near the Ni–Al interface. Anomalous resistivity enhancement increases with decreasing both the periodicity and the modulated ratio, but is insensitive to the number of bilayers. Accounting for the effects of grain boundary and interface boundary, the dominative mechanism at distinct length scales can be interpreted with the modified model of those of Fuchs–Sondheimer and Mayadas–Shatzkes. Especially for the thinnest film with smallest modulated ratio, the intermixing effect turns out to be the crucial mechanism in the electronic transportation of metallic nanomultilayers.

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Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe+ ions

Abstract: Electrical and structural investigations of Ag-based Ohmic contacts for In Al As ∕ In Ga As ∕ In P high electron mobility transistors

Cited by 2 publications

References 6 publications

Asymmetric Intermixing and the Stress Buildup in Ni/Al-typed Nanomultilayer with Different Characteristic Scales

Asymmetric Intermixing and the Stress Buildup in Ni/Al-typed Nanomultilayer with Different Characteristic Scales

Anomalous electronic transport in metallic nanomultilayer at all length scales: Influence of grain boundary and interface boundary

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