“…In addition to synthesize stable impurity-doped nanocrystals, more attention needs to be paid to the careful manipulation of device engineering (e.g., using inorganic HTL and ETL, lowering charge injection barrier, improving charge balance, and reducing charge leakage) [ 360 , 361 , 362 , 363 ] and the introduction of advanced encapsulation technologies to avoid the moisture and oxygen (e.g., multilayer Al 2 O 3 and SiO 2 atomic layer deposition [ 364 ] and organic-inorganic multilayer structures [ 365 ] to reduce the water vapor transmission rate toward the ideal encapsulating barriers (10 −6 g −1 m −2 day −1 ) [ 366 ]). Upon loosening these bottlenecks, the prospect for mass production of impurity-doped nanocrystal LEDs will be undoubtedly bright and the proposed solutions are also conducive to the related optoelectronic fields (e.g., solar cells, lasers, photodetectors, sensors, X-ray imaging, and light communication) [ 367 , 368 , 369 , 370 , 371 , 372 ].…”