2014
DOI: 10.1007/s10854-014-2351-y
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Electrical, electrochemical and photo-electrochemical studies on the electrodeposited n-type semiconductor hexagonal crystalline CdS thin film on nickel substrate

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Cited by 29 publications
(24 citation statements)
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“…where ε denotes the dielectric constant of the semiconductor (ε CdS = 8.9), 65 ε 0 denotes the permittivity of vacuum (8.86 × 10 −12 F m −1 ), e 0 is the electronic charge unit (1.6 × 10 −19 C), and V is the potential applied on the electrode. Based on which, N D values of blank CdS NW and 3 wt % Pd−CdS NW heterostructures were calculated to be 5.69 × 10 28 and 10.8 × 10 28 cm −3 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…where ε denotes the dielectric constant of the semiconductor (ε CdS = 8.9), 65 ε 0 denotes the permittivity of vacuum (8.86 × 10 −12 F m −1 ), e 0 is the electronic charge unit (1.6 × 10 −19 C), and V is the potential applied on the electrode. Based on which, N D values of blank CdS NW and 3 wt % Pd−CdS NW heterostructures were calculated to be 5.69 × 10 28 and 10.8 × 10 28 cm −3 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Preparation of the electrodes and the preparation of solutions were performed by the method as described in previous work. [5] In this method, the Pt-electrode and the deposition electrolyte containing electro-active components of the following composition: 2PbCO 3 AEPb(OH) 2 (0.3 M) + Sb 2 O 3 (0.015 M) + TeO 2 (0.005 M) + H 3 BO 3 (1.5 M) + HBF 4 (0.4 M) + H 2 CO (0.6 g l À1 ) and joiner's glue (1.5 g l À1 ) were used.…”
Section: Instrumentation Tools and Methodsmentioning
confidence: 99%
“…Charges are transferred between the semiconductor and the solution phase when they come into contact [51]. M-S analysis occurred through the graphing of the inverse square of space-charge capacitances (1/C SC 2 ) against the various applied potentials.…”
Section: Interfacial Properties Ofmentioning
confidence: 99%