Electrical diagnostics of the amplifier operation and a feasibility of signal registration on the basis of the voltage saturation effect in junction laser diodes

Semiconductor optical amplifiers grown on a metamorphic substrate for long wavelength applications

“…The gain spectrum of the device was measured by comparing the output power of the SOA to TE or TM polarized light coupled into the SOA via a PMF fiber. The gain was corrected for coupling losses, by measuring the transparency level [16], and taking the gain to be equal to 0, and including the waveguide absorption losses.…”

Modeling of injection-induced conductivity effects in light-emitting and laser diodes

“…(1 .2) is the nonlinear differential resistance of the junction. This scheme of analysis had been used to investigate what does happen with electric variable in the laser diode at the lasing threshold and at amplification regime [1][2][3]. The result was the nonlinear differential resistance shows a trend to be reduced, sometimes to zero, reflecting the fact that the junction voltage in the laser diode goes to saturation above the lasing threshold [1 -4].…”

“…The junction voltage is determined by iSF, namely, V is equal or slightly larger than F/e. In principle, this phenomenon provides identification the oscillation threshold current with only electrical measurements [1][2][3][4][5][6][7] so far these measurements are closely related to the Fermi voltage.…”