Electrical determination of band offsets in a <i>p</i>-Ga0.77In0.23As0.20Sb0.80/ <i>n</i>-GaSb type-II heterojunction

Mébarki, M.; Boukredimi, D.; Sadik, Şerıf Ali; Lazzari, J.–L.

doi:10.1063/1.353114

Cited by 13 publications

(7 citation statements)

References 18 publications

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“…For example, ⌬E v ϭϪ0. 12 eV was obtained for lattice-matched Ga 0.77 In 0.23 Sb 0.80 As 0.20 /GaSb from a capacitance-voltage (C -V) measurement, 35 38 and Al 0.66 In 0.34 Sb 0.15 As 0.85 /Ga 0.64 In 0.36 Sb 0.16 As 0.84 39 respectively, in relatively good agreement with MST predictions of 0.42 eV, Ϫ0.062 eV, and Ϫ0.151 eV, respectively. As a result, ⌬E v ϭ0.22 eV and ⌬E c Ͼ0.70 eV were obtained from the transitivity rule for Al 0.66 In 0.34 Sb 0.15 As 0.85 /InP, justifying efforts of fabricating HEMTs from this material system.…”

Section: Mixed Group-v Heterostructures A"b Y C 1ày …mentioning

confidence: 99%

Band offsets of AlxGa1−xSbAs/InGaAs heterojunctions

Cai

Miller

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Mixed Group-v Heterostructures A"b Y C 1ày …mentioning

confidence: 99%

Band offsets of AlxGa1−xSbAs/InGaAs heterojunctions

Cai

Miller

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Sb-based photodiodes operating in the spectral range 2-5 µm are very attractive for such important applications as gas pollutant analysis, ecological monitoring, medical diagnostics, low-loss optical communications, laser rangefinding, etc [103][104][105][106][107][108][109][110][111][112][113][114][115][116]. Recently longwavelength photodiodes operating at room temperature based on InAsSb, GaInSb, InAsSbP GaInAsSb multicomponent solid solutions grown by LPE [103][104][105][106][107][108][109] as well as MBE grown InGaAs/GaAs superlattices were reported elsewhere [110].…”

Section: Type II Sb-based Photodiodes For the Spectral Range 2-5 µMmentioning

confidence: 99%

“…Recently it was established that the p-GaSb/n-InGaAsSb system exhibits metal conductivity and provides an ohmic contact [55], similar to p-InAs/n-GaSb [44] and InAsSb/GaAsSb heterostructures [112]. This feature can be used for decreasing the serial resistance in long wavelength InGaAsSb/GaSb photodiode structures [111].…”

Section: Type II Sb-based Photodiodes For the Spectral Range 2-5 µMmentioning

confidence: 99%

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Mikhaĭlova¹,

Moiseev²,

Yakovlev³

2004

Semicond. Sci. Technol.

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This review deals with a study of optical and magnetotransport phenomena at a type II arsenide-antimonide heterojunction with a broken-gap alignment. A fundamental feature of this structure is partial overlapping of the InAs conduction band with the GaSb-rich solid solution valence band. In such a heterostructure, electrons and holes are spatially separated and localized in self-consistent quantum wells formed on both sides of the heterointerface. This leads to unusual tunnelling-assisted radiative recombination transitions and novel transport properties. Results of a pioneering study of interface-related luminescence in type II broken-gap GaInAsSb/InAs heterostructures, with a high quality abrupt heteroboundary, grown by the LPE method, are presented. The energy band diagram of the type II broken-gap GaInAsSb/InAs(GaSb) heterostructures and band overlapping control, depending on a doping level and epilayer composition of quaternary solid solution, are discussed. A 2D-electron channel with high Hall mobility at the p-GaInAsSb/p-InAs interface was found and examined. A great deal of attention is paid to quantum transport properties of the semimetal channel in a wide magnetic field range (up to 18 T) at low temperatures. A cyclotron resonance study was used to obtain data on the energy spectrum at the interface and to estimate effective masses for subbands in the semimetal channel. The intriguing behaviour of the 2D-electron system in the presence of localized holes in high magnetic fields and the first observation of integer quantum Hall effect plateaus on the type II single GaInAsSb/InAs heterointerface formed by LPE are demonstrated. A tunnelling-injection laser with high asymmetric band offset confinements based on the type II broken-gap heterojunction is considered. Applications of the interface-induced phenomena in luminescent and transport properties for the design of novel mid-IR optoelectronic devices and Hall sensors are briefly reviewed.

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“…Our VBO and CBO values calculated for x = 0.15, 0.2 and 0.23 are reported in table 4, experimental [43][44][45] and theoretical [46] data are also summarized in the same table for comparison.…”

Section: Resultsmentioning

confidence: 99%

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Jdidi¹,

Sfina²,

Nassrallah³

et al. 2011

Semicond. Sci. Technol.

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The authors report a two-color quantum well infrared photodetector at room temperature operating in the mid-and long-wavelength infrared detection. To this purpose, the band alignment is tailored and electronic properties are investigated for the proposed structure based on Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb. As accurate knowledge of band offsets is required in device modeling, we have proceeded to theoretical investigations of the band offsets for pseudo-morphically strained and lattice-matched Ga 1−x In x As y Sb 1−y /GaSb and Al x Ga 1−x As y Sb 1−y /GaSb heterointerfaces in the whole range of alloy compositions 0 x, y 1. The carrier effective masses are deduced from the laws extracted from the k.p strain Hamiltonian laws. For the modeled heterostructure, the dark current of about 10 −1 A cm −2 at ambient temperature shows the high performance of this multi-color infrared photodetector around 5 and 12.5 μm wavelengths.

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Electrical determination of band offsets in a p-Ga0.77In0.23As0.20Sb0.80/ n-GaSb type-II heterojunction

Cited by 13 publications

References 18 publications

Band offsets of AlxGa1−xSbAs/InGaAs heterojunctions

Band offsets of AlxGa1−xSbAs/InGaAs heterojunctions

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

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