Electrical critical dimension metrology for 100-nm linewidths and below

Grenville, Andrew; Coombs, Brian; Hutchinson, John M.; Kuhn, Kelin J.; Miller, David B.; Troccolo, Patrick M.

doi:10.1117/12.389034

Cited by 9 publications

(8 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, the right edge shows a smaller CD than the rest of the wafer. Note that the CD values in Figure 2 are much smaller than the target CD of 130 nm due to the bias between electrical and physical CD [12]. The next step is to use this information to calculate the "average'" field by averaging the CD measurements for the five wafers at each point in the field (Figure 3).…”

Section: Resultsmentioning

confidence: 99%

Electrical linewidth metrology for systematic CD variation characterization and causal analysis

Cain

Spanos

2003

SPIE Proceedings

View full text Add to dashboard Cite

Control of critical dimension (CD) variation is of extreme importance in modern semiconductor manufacturing processes. To be controlled, the nature of CD variation must be understood. This paper outlines a method for characterizing systematic spatial variation by means of dense electrical linewidth measurements, including actual sample data. In addition, since exhaustive sampling is prohibitively expensive for routine use, a method is discussed for finding an optimum economical sampling plan and using this plan to track systematic CD variation over time.

show abstract

Section: Resultsmentioning

confidence: 99%

Electrical linewidth metrology for systematic CD variation characterization and causal analysis

Cain

Spanos

2003

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…Especially, sidewall out-diffusion makes a significant effect on the constant offset. 8 Consequently,since one of the goals of this experiment is to correlate ELM process with real devices, we prefer to follow traditional poly process. We suggested silicon nitride capping layer as a protection from out-diffusion as shown in figure 4 (c).…”

Section: Methodsmentioning

confidence: 99%

Electrical linewidth measurement for next-generation lithography

Kye

Levinson

2001

SPIE Proceedings

View full text Add to dashboard Cite

In recent years electrical linewidth measurement (ELM) has become accepted as an efficient method to gather large amounts of linewidth data rapidly and accurately. However, there are offsets between electrical and SEM measurements. While these have not been a concern for large features, it is important to minimize the bias as the actual linewidth approaches the offset. The purpose of this paper is to demonstrate that ELM can be used to measure linewidths much smaller than 100nm. Our experiments show that out-diffusion and surface ion depletion are the primary sources of bias in electrical linewidth measurement. Silicon nitride capping layers before annealing are helpful to prevent out-diffusion.

show abstract

“…At the other extreme, only 25 points per field are measured, but all 23 fields on the wafer are measured. In all cases the plans are chosen so that the total number of measurements remains roughly constant at around 600 measurements, which might require a few hours of CD-SEM time, but could be accelerated by an approximate factor of ten if one uses Electrical Linewidth Metrology (ELM) 16,17 . The sampling plans are summarized in Table 7.…”

Section: Selection Of Optimum Sampling Planmentioning

confidence: 99%

Optimum sampling for characterization of systematic variation in photolithography

2002

View full text Add to dashboard Cite

In this paper, variability in the photolithography pattern transfer process is analyzed by means of a large number of CD measurements spread across the stepper field and across the wafer. The variability is found to be highly systematic in nature, and methods are developed to extract the parameters of this systematic variation. Knowledge of the structure of the systematic variance allows for the selection of an optimum sampling plan to best capture the variance in future measurements of wafers from the same process.

show abstract

Electrical critical dimension metrology for 100-nm linewidths and below

Cited by 9 publications

References 0 publications

Electrical linewidth metrology for systematic CD variation characterization and causal analysis

Electrical linewidth metrology for systematic CD variation characterization and causal analysis

Electrical linewidth measurement for next-generation lithography

Optimum sampling for characterization of systematic variation in photolithography

Contact Info

Product

Resources

About