Electrical conductivity of Zn3As2

Szatkowski, J.; Sierański, K.

doi:10.1016/0022-3697(90)90053-i

Cited by 15 publications

(5 citation statements)

References 10 publications

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“…Overall, the electrical measurements indicate that the Zn 3 As 2 nanosails are degenerately doped. Our results are consistent with some of the prior works on epitaxial Zn 3 As 2 . The Zn 3 As 2 material in this study is found to be unintentionally p‐type.…”

Section: The Different Observed Phases Of Zn3as2 Their Space Group supporting

confidence: 93%

“…Belonging to the same family, zinc arsenide (Zn 3 As 2 ) is a p‐type semiconductor structurally similar to Zn 3 P 2 . It exhibits a band gap around 1.0 eV and potentially high hole mobilities . The stoichiometry of this material can be transformed continuously into Cd 3 As 2 or Zn 3 P 2 by appropriate atomic substitutions, shifting its bandgap energy toward 1.5 eV and 0 eV, respectively.…”

Section: The Different Observed Phases Of Zn3as2 Their Space Group mentioning

confidence: 99%

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Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Stutz

Friedl

Burgess³

et al. 2019

Physica Rapid Research Ltrs

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Zn 3 As 2 is a promising earth-abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain-free Zn 3 As 2 nanosails, grown by metal-organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P4 2 /nmc (D 15 4h ) α"-Zn 3 As 2 metastable phase. Temperature-dependent Hall effect measurements indicate that the material is degenerately p-doped with a hole mobility close to 10 3 cm 2 V À1 s À1 . Our results display the potential of Zn 3 As 2 nanostructures for next generation energy harvesting and optoelectronic devices.The increasing production of high-performance electronic devices and the push towards generating energy in a sustainable manner leads to sustainability challenges for optoelectronic and photovoltaic (PV) technologies. Particularly affected are devices using atomic elements of scarce abundance in the earth's crust, which prevents their widespread deployment. In this context, highly functional materials made of earth-abundant elements are being sought for both PV and optoelectronic applications. The second most abundant element in the earth's crust, silicon, is a semiconductor very successfully deployed in the PV market. It suffers nonetheless from its indirect bandgap and the consequently high purity required for the production of efficient solar cells. Both characteristics increase the energy needs for silicon PV device production. The so-called "second generation" solar cells, built with much thinner, direct bandgap active layers, could in principle solve these two issues. Still, these thin film solar cells exhibit either a long energy payback time (amorphous silicon) or they use scarce and expensive elements (ex: copper, indium, gallium, selenium, cadmium, tellurium).Direct bandgap semiconductors employing earth-abundant elements could combine the advantages of all these material families. They would enable efficient light collection in a thin film of easily available materials. Copper zinc tin sulfide (CZTS) and zinc phosphide (Zn 3 P 2 ) have received increasing attention as materials satisfying these criteria for efficient and sustainable light conversion discussed so far. Belonging to the same family, zinc arsenide (Zn 3 As 2 ) is a p-type semiconductor structurally similar to Zn 3 P 2 . It exhibits a band gap around 1.0 eV [1] and potentially high hole mobilities. [2] The stoichiometry of this material can be transformed continuously into Cd 3 As 2 [3] or Zn 3 P 2[4] by appropriate atomic substitutions, shifting its bandgap energy toward 1.5 eV and 0 eV, respectively. (Zn 1Àx Cd x ) 3 As 2 transforms from a semiconductor to a threedimensional Dirac semimetal as x reaches 0.62. [5] The ability to tune its direct bandgap energy makes this material system very attractive for long-wavelength optoelectronics and as a constituent in multi-junction solar cells. M II 3 X V 2 comp...

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Section: The Different Observed Phases Of Zn3as2 Their Space Group supporting

confidence: 93%

Section: The Different Observed Phases Of Zn3as2 Their Space Group mentioning

confidence: 99%

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Stutz

Friedl

Burgess³

et al. 2019

Physica Rapid Research Ltrs

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“…Fits to the I−V curves using this analysis are shown for the roomtemperature plots, with the background carrier concentration of the NW determined to be 1.67 × 10 18 cm −3 , and the platelet 7.41 × 10 18 cm −3 . Although high, these values are consistent with previous studies, which have found Zn 3 As 2 to possess a significant p-type background 19,63,64 that has been related to shallow-level 15 native defects. 20 Compensation of this p-type character has previously been successfully achieved by doping with In.…”

supporting

confidence: 92%

“…Relatively unexplored, the II–V family of semiconductors holds appeal for a diverse range of applications. Examples range from the highly earth abundant Zn 3 P 2 , which is an attractive material for PVs, , to materials of lesser abundance such as Zn 4 Sb 3 , which is among the most efficient of thermoelectric materials, , and Cd 3 As 2 , which was recently identified as one of the few known examples of a three-dimensional topological Dirac semimetal. , Less well studied, Zn 3 As 2 is an earth abundant semiconductor with a band gap around 1.0 eV , and the potential to realize high hole mobilities. − Of key importance for possible optoelectronic applications, the band gap may be tuned across the infrared through alloying with Cd 3 As 2 (semimetal) and Zn 3 P 2 (1.5 eV). , The epitaxial integration of Zn 3 As 2 with established III–V materials is also possible due to their close structural similarity and, in the case of InP, a lattice mismatch of only 0.5%. , …”

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confidence: 99%

Zn₃As₂ Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material

et al. 2014

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The development of earth abundant materials for optoelectronics and photovoltaics promises improvements in sustainability and scalability. Recent studies have further demonstrated enhanced material efficiency through the superior light management of novel nanoscale geometries such as the nanowire. Here we show that an industry standard epitaxy technique can be used to fabricate high quality II-V nanowires (1D) and nanoplatelets (2D) of the earth abundant semiconductor Zn3As2. We go on to establish the optoelectronic potential of this material by demonstrating efficient photoemission and detection at 1.0 eV, an energy which is significant to the fields of both photovoltaics and optical telecommunications. Through dynamical spectroscopy this superior performance is found to arise from a low rate of surface recombination combined with a high rate of radiative recombination. These results introduce nanostructured Zn3As2 as a high quality optoelectronic material ready for device exploration.

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“…An interesting aspect with respect to the p -type conductivity of ZnO:As is given by the fact that Zn 3 As 2 is described as a p -type semiconductor with a hole concentration in the range of 10 17 cm −3 . Interestingly, the highest p -type conductivity, the highest concentration of holes, and the XPS intensity maximum of the As−Zn states were found after annealing at 750 °C at an oxygen pressure of 1.3 × 10 −3 Pa .…”

Section: Discussionmentioning

confidence: 99%

Phase Segregation and Transformations in Arsenic-Implanted ZnO Thin Films

et al. 2011

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The conversion of ZnO into a p-type semiconductor remains a major challenge for its application in optoelectronic devices because up to now neither the suitable type of defects nor the possible role of secondary phase formation during doping has been clarified. Here, the implantation of arsenic into epitaxial ZnO thin films on R-Al 2 O 3 (0001) and subsequent isothermal annealing in high vacuum are studied by particle-induced X-ray emission, X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The as-implanted ZnO:As films are single phase and exhibit a locally disordered ZnO lattice structure. Zn 3 As 2 nanocrystals segregate at 700 °C. Because of annealing at 800 °C, R-As and R-As 2 O 3 are formed. The study demonstrates the role of solid-state reactions and secondary phase formation for group V element doping of ZnO that is a promising route to convert this material into a p-type semiconductor.

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Electrical conductivity of Zn3As2

Cited by 15 publications

References 10 publications

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Zn₃As₂ Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material

Phase Segregation and Transformations in Arsenic-Implanted ZnO Thin Films

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Electrical conductivity of Zn3As2

Cited by 15 publications

References 10 publications

Nanosails Showcasing Zn3As2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

Nanosails Showcasing Zn3As2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material

Phase Segregation and Transformations in Arsenic-Implanted ZnO Thin Films

Contact Info

Product

Resources

About

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Nanosails Showcasing Zn₃As₂ as an Optoelectronic‐Grade Earth Abundant Semiconductor

Zn₃As₂ Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material