1985
DOI: 10.1016/0022-3697(85)90175-1
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Electrical conductivity of pure and doped α-ferric oxides

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Cited by 25 publications
(7 citation statements)
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“…Thus, gas-sensitivity is obtained through the gas-induced changes in the stoichiometry of the oxide. On the other hand, α-Fe 2 O 3 is a thermally stabile n-type semiconductor where the conductivity results from oxygen vacancies [16,34,35]; the reported band gap values are between 2.0 and 2.7 eV [36,37]. Oxides of this type, e.g.…”
Section: Characterizationmentioning
confidence: 96%
“…Thus, gas-sensitivity is obtained through the gas-induced changes in the stoichiometry of the oxide. On the other hand, α-Fe 2 O 3 is a thermally stabile n-type semiconductor where the conductivity results from oxygen vacancies [16,34,35]; the reported band gap values are between 2.0 and 2.7 eV [36,37]. Oxides of this type, e.g.…”
Section: Characterizationmentioning
confidence: 96%
“…Gardner et al [ 28 ] measured the oxygen deficit resulting from this equilibrium shift. Considering this structural disorder and the independence of the hematite conductivity regarding the oxygen partial pressure shown in the Figure 6 a, we can conclude that this material is an intrinsic semiconductor [ 27 , 29 ]. The large value of activation energy measured in this work ( Table 3 ) is the consequence of our experimental procedure where samples were sintered at 1300 °C and cooled under air laboratory.…”
Section: Resultsmentioning
confidence: 94%
“…Oxygen vacancies (VO) can be produced by heating this material following the disorder Equation (3) [27]: OOX=12O2false(gfalse)+VO+2e…”
Section: Resultsmentioning
confidence: 99%
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“…Specifically, Fe 2 O 3 is oxygen deficient and oxygen vacancies are considered as the predominant defect for the oxide. Oxygen vacancies are readily generated in the oxide when Fe 2 O 3 is heated at a low pressure [8,9]. Typically, oxygen vacancies in metal oxides act as adsorption sites for O 2 (g) because they serve as electron donors.…”
Section: Discussionmentioning
confidence: 99%