Electrical conductivity of polydivinylbenzene films

Gregor, L. V.

doi:10.1016/0040-6090(68)90004-7

Cited by 44 publications

(22 citation statements)

References 8 publications

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“…The number of organic device structures that have been reported to show resistive switching is truly remarkable. The simplest structure, and among the earliest reported, [16,17] is that of a metal-insulator-metal (MIM) sandwich. In work by Gregor, [16,17] both electrodes were lead (Pb) and the organic insulator was 10 to 25 nm of glow-discharge-deposited poly(divinylbenzene).…”

Section: Reviewmentioning

confidence: 99%

“…The simplest structure, and among the earliest reported, [16,17] is that of a metal-insulator-metal (MIM) sandwich. In work by Gregor, [16,17] both electrodes were lead (Pb) and the organic insulator was 10 to 25 nm of glow-discharge-deposited poly(divinylbenzene). These devices exhibited resistance changes of several orders of magnitude at a voltage of 1-2 V, with rise-times of about 1 ls, a retention time of 30 minutes, and could be cycled 250 000 times.…”

Section: Reviewmentioning

confidence: 99%

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Nonvolatile Memory Elements Based on Organic Materials

2007

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Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge–voltage (capacitive) or current–voltage (resistive) response. A critical summary of the proposed charge‐transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on–off ratio, on‐state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.

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Section: Reviewmentioning

confidence: 99%

Section: Reviewmentioning

confidence: 99%

Nonvolatile Memory Elements Based on Organic Materials

2007

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“…However, the stability of organic materials, which leads to high SET/RESET voltage, power consumption, and dispersed voltage distribution characteristics of RRAM devices, needs to be further strengthened, and the supply of materials is also a problem that needs to be resolved. [19][20][21][22][28][29][30][31][32][33][34][35][36][37] On the other hand, inorganic materials can be manufactured by simple processes, show stable performance, have low cost, and are receiving extensive attention from researchers. We mainly introduce solid electrolyte, oxides, and low-dimension system of the inorganic resistive switching materials.…”

Section: Materials For Rrammentioning

confidence: 99%

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

Wang

Yan

2019

Physica Rapid Research Ltrs

133

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Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on. This review article summarizes the materials, filament mechanisms, performance optimization, and application prospects of RRAM structures to provide readers with a reference for future investigation. The filament mechanisms, which involve the electrochemical metallization mechanism (ECM), valence change mechanism (VCM), and thermochemical mechanism (TCM), of RRAM devices are particularly highlighted. The parameters that determine the RRAM characteristics such as operating voltages, ON/OFF ratio, endurance, and data retention are improved by incorporating the three methods: 1) “interface engineering”, 2) element doping of functional materials, and 3) introduction of low‐dimensional materials. In the last section, a brief introduction to the future RRAM application prospects and challenges is provided.

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“…In order to study the data density of the devices, atomic force microscropy (AFM) [14] or scanning tunneling microscopy (STM) [28] was used as the characterization technique. Since the 1960s, many efforts have been devoted to applications of thin organic films to data storages [29] . However, due to the lack of appropriate techniques, the introduction of organic materials into memory devices is hardly realized.…”

Section: Figurementioning

confidence: 99%

Memory devices based on organic electric bistable materials

2007

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Organic/metallic composites have demonstrated electrical bistability, as well as memory effects. These advanced materials have shown potential applications in digital information storage because of their good stability, flexibility and fast response speed. The electric bistability phenomenon can be explained by electric field-induced electron transfer/storage. This article reviews the recent progress of memory devices based on organic/metallic and polymeric composites with electric bistability.

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Electrical conductivity of polydivinylbenzene films

Cited by 44 publications

References 8 publications

Nonvolatile Memory Elements Based on Organic Materials

Nonvolatile Memory Elements Based on Organic Materials

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

Memory devices based on organic electric bistable materials

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