Electrical Conductivity of Insulating SrTiO<sub>3</sub>and LaGaO<sub>3</sub>at Phase Transitions

Matsumoto, Daisuke; Yamato, Mizuki; Urakami, Yosuke; Watanabe, Yoshihisa

doi:10.1080/00150190701196146

Cited by 4 publications

(1 citation statement)

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“…For example, metal titanates such as SrTiO 3 have a favorable band edge position for PEC water splitting, 91 while its application is limited by its large band-gap, as well as poor electrical conductivity. 92,93 Theoretical studies showed that oxygen vacancies are shallow donors for SrTiO 3 . 94,95 Therefore, it is expected that the PEC performance of SrTiO 3 could be improved by the incorporation of oxygen vacancies.…”

Section: Perspectivementioning

confidence: 99%

Oxygen-deficient metal oxide nanostructures for photoelectrochemical water oxidation and other applications

2012

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This review presents highlights of the latest results of studies directed at developing oxygen-deficient metal oxides, including TiO(2), WO(3), and α-Fe(2)O(3), nanostructures as electrode materials, which show significantly enhanced performance in applications for photoelectrochemical water oxidation. The enhanced photoelectrochemical performance is attributed to improved electrical conductivities by controlled incorporation of oxygen vacancies as shallow donors for metal oxides. We also discuss the potential of these oxygen-deficient metal oxides for other energy conversion and storage applications, such as photocatalytic reactions and charge storage.

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Section: Perspectivementioning

confidence: 99%

Oxygen-deficient metal oxide nanostructures for photoelectrochemical water oxidation and other applications

2012

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Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO3 films

Kim

Sohn

Kim

et al. 2021

Applied Physics Letters

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Ferromagnetism and exotic topological structures in SrRuO3 (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We investigate the AHE and hump structure in the Hall resistivity of SRO ultra-thin films with an SrTiO3 (STO) capping layer and ionic liquid gating. STO capping results in sign changes in the AHE and modulation of the hump structure. In particular, the hump structure in the Hall resistivity is strongly modulated and even vanishes in STO-capped 4 unit cell films. In addition, the conductivity of STO-capped SRO ultra-thin films is greatly enhanced with restored ferromagnetism. We also performed ionic liquid gating to modulate the electric field at SRO/STO interface. Drastic changes in the AHE and hump structure are observed with different gate voltages. Our study shows that the hump structure as well as the AHE can be controlled by tuning inversion symmetry and the electric field at the interface.

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Carrier Generation at Ferroelectric Phase Transitions Evidenced in Conductivity-Overshooting

et al. 2008

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Electrical Conductivity of Insulating SrTiO₃and LaGaO₃at Phase Transitions

Cited by 4 publications

References 1 publication

Oxygen-deficient metal oxide nanostructures for photoelectrochemical water oxidation and other applications

Oxygen-deficient metal oxide nanostructures for photoelectrochemical water oxidation and other applications

Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO3 films

Carrier Generation at Ferroelectric Phase Transitions Evidenced in Conductivity-Overshooting

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Electrical Conductivity of Insulating SrTiO3and LaGaO3at Phase Transitions

Cited by 4 publications

References 1 publication

Oxygen-deficient metal oxide nanostructures for photoelectrochemical water oxidation and other applications

Oxygen-deficient metal oxide nanostructures for photoelectrochemical water oxidation and other applications

Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO3 films

Carrier Generation at Ferroelectric Phase Transitions Evidenced in Conductivity-Overshooting

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Electrical Conductivity of Insulating SrTiO₃and LaGaO₃at Phase Transitions