Electrical conductivity of heavily doped diamond

Tsay, Y. F.; Ananthanarayanan, K. P.; Gielisse, P. J.; Mitra, S. S.

doi:10.1063/1.1661788

Cited by 16 publications

(6 citation statements)

References 21 publications

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“…7(b)], E a is estimated from the slope of the tangential line at the same temperature as in the previous report (above 200 K). 12) The estimated value of E a is 8.2 meV. The small activation energy is analogous with the temperature dependence of the resistance of superconducting BDD above T c .…”

Section: Electronic Structures Of Al-3p and C-2pmentioning

confidence: 79%

“…7(a)]. In a previous report, 12) the activation energy E a of a lightly ADD sample (2:5 Â 10 16 cm −3 , 1:4 Â 10 À5 at. %) was estimated to be 0.31 eV.…”

Section: Electronic Structures Of Al-3p and C-2pmentioning

confidence: 96%

“…% ∼ 10 21 cm −3 ), in which the MI transition might be due to strong hybridization between Al and C orbitals. 11) The synthesis of lightly ADD (n Al ¼ 2:5 Â 10 16 cm −3 ) has been reported, 12) while there have been no reports on the synthesis of heavily ADD, which theoretically exhibits metallic features. The purpose of the present study is to synthesize heavily ADD using the conventional microwave plasma chemical vapor deposition (MPCVD) method and to investigate the possibility of its superconductivity.…”

Section: Introductionmentioning

confidence: 99%

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Electronic Structures of Aluminum-Doped Diamond near the Fermi Level

et al. 2015

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Aluminum-doped diamond samples were synthesized using the conventional microwave plasma chemical vapor deposition method. The electronic structures were measured using an electron probe microanalyzer and by X-ray photoelectron spectroscopy. The area intensity of the partial profile of Al-3p near the Fermi level increased with increasing aluminum concentration in the sample. The partial profile of Al-3p resembles that of C-2p at high aluminum concentrations, which suggests strong hybridization between Al-3p and C-2p. Additionally, the temperature dependence of the electric resistance yields an activation energy of 8.2 meV at room temperature. The present results suggest the metal-insulator transition of aluminum-doped diamond, similar to that of boron-doped diamond. However, with increasing aluminum concentration, a considerable amount of carriers is not doped to C-2p orbitals in aluminum-doped diamond. The present results indicate that superconductivity in aluminum-doped diamond with the same mechanism as that in boron-doped diamond does not occur. Fig. 1. (Color online) Schematic view of stage, target, and Si substrate wafer in chamber used for MPCVD synthesis.

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Section: Electronic Structures Of Al-3p and C-2pmentioning

confidence: 79%

“…7(a)]. In a previous report, 12) the activation energy E a of a lightly ADD sample (2:5 Â 10 16 cm −3 , 1:4 Â 10 À5 at. %) was estimated to be 0.31 eV.…”

Section: Electronic Structures Of Al-3p and C-2pmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Electronic Structures of Aluminum-Doped Diamond near the Fermi Level

et al. 2015

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“…This study was done to provide further confirmation of metastable diamond growth. At boron concentrations higher than 10 17 to 10 18 cm −3 , an impurity band forms and the acceptor gap is reduced [31][32][33][34]. The boron-doping agent is usually added through small amounts of diborane, trimethyl boron, or organic borates in the source gases, but solid-state boron sources have also been successfully used.…”

Section: Doping Of Diamondmentioning

confidence: 99%

Electrochemistry on Diamond: History and Current Status

Angus¹

2011

Synthetic Diamond Films

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“…1/s). Based on these equations, reasonable fits have been achieved for the low temperature data (see for example Ref [19,57,58]…”

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confidence: 96%

Quantized electronic properties of diamond

Nebel¹,

Yang²,

Uetsuka³

et al. 2008

Journal of Applied Physics

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A review of electronic properties of insulating-, boron-and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p-and n-type doping. Undoped diamond is an insulator with conductivities significantly smaller than 10 -17 Ωcm at room temperature.Mostly, these insulating films show conductivity activation energies of 1.7 eV, an indication that small amounts of substitutional nitrogen dominates the Fermi-level. The electron and hole mobilities are very high (> 20.000 cm 2 /Vs at T = 80 K) and are limited by acoustic phonon scattering. By phosphorus and boron doping diamond becomes semiconducting with an ntype donor activation energy (phosphorus) of 600 meV and an acceptor activation energy (boron) of 370 meV. Both dopands are hydrogen-like in nature. Due to the deep donor levels conductivity at room temperature is limited, electronic application will therefore be hightemperature devices. Both, electrons and holes show nearly the same mobilities which is promising for bi-polar applications, however, due to the very different doping levels low temperature devices will be governed by holes with increasing contribution of electrons towards higher temperatures. The effect of temperature on the carrier activation from donors and acceptors, on carrier scattering as well as on transport via hopping is shown in combination with some basic physical models and descriptions. The results confirm the superior electronic properties of diamond which makes it very promising for future electronic applications.

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Electrical conductivity of heavily doped diamond

Abstract: Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films

Cited by 16 publications

References 21 publications

Electronic Structures of Aluminum-Doped Diamond near the Fermi Level

Electronic Structures of Aluminum-Doped Diamond near the Fermi Level

Electrochemistry on Diamond: History and Current Status

Quantized electronic properties of diamond

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