Electrical conductivity in structurally inhomogeneous discontinuous metal films

Borziak, P.G.; Dyukov, V; Костенко, А. Д.; Kulyupin, Yu. A.; Nepijko, S. A.

doi:10.1016/0040-6090(76)90389-8

Cited by 30 publications

(10 citation statements)

References 1 publication

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“…Varying the voltage across the film yields the diode-like characteristic shown in figure 36, where the approximate 10:1 resistance ratio very nearly matches that observed by Borziak et al (figure 22) [30,64].…”

Section: Diode Effectsupporting

confidence: 79%

“…Their results generally show minimum electric fields in the bulk of the film, away from the contacts, with larger values towards the contacts. The assumption was that these effects were due to structural variations along the film but the deviations from linearity in figure 17(a) suggest the existence of space charges in the film [64]. The implication in the text is that the L and R contacts for figure 17(a) are identical and of type a in figure 18.…”

Section: Electric Field Distributionmentioning

confidence: 97%

“…With charge pair generation, recombination and 'drift' in the center of the film are analogous to electronhole pair behavior in a semicondctor, so the central region's behavior could be characterized by standard seminconductor theory, but with different dynamics characterizing each individual process, e.g. [30,64,71,72] for charge separation.…”

Section: Revised Conduction Modelmentioning

confidence: 99%

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Electron transport in discontinuous metal thin films

Morris

2022

Nano Ex.

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The structure and basic experimental electrical properties of vacuum evaporated discontinuous (island) metal thin films of discrete metal nanoparticles on insulating substrates are briefly reviewed. Then the widely accepted Neugebauer and Webb (N&W) electrostatically activated electron tunneling conduction model is covered (with enhancements) before the numerous discrepancies between this model and experimental observations are identified, e.g. minimal substrate bias effect, non-linear field distribution, anomalous AC effects, asymmetrical contact effects, and switching. A modified model, based on contact electron injection and extraction, and computer simulations are introduced which explain these discrepancies at a qualitative level. However, quantitative experimental verification of the model is not possible without stable, reproducible films of known structures. The paper concludes with a review of possible preparation techniques which could yield satisfactory samples, especially self-assembly of organically protected metal nanoparticles. One of these has already demonstrated electrostatically activated conduction.

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Section: Diode Effectsupporting

confidence: 79%

Section: Electric Field Distributionmentioning

confidence: 97%

Section: Revised Conduction Modelmentioning

confidence: 99%

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Electron transport in discontinuous metal thin films

Morris

2022

Nano Ex.

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“…Currentvoltage ͑IV͒ measurements were linear for both types of films without hysteresis or polarity-dependence for biases up to several volts which indicates homogenous electrode/film interfaces. 17 However, electric transport across a nanogap which is described by quantum tunneling, only presents linear IV behavior for small enough biases V approaching 0 V that do not alter the height of the energy barrier. 18 This discrepancy can be explained by the distribution of the external bias into small potential drops across the multitude of nanogaps within a discontinuous film.…”

mentioning

confidence: 99%

The transition in hydrogen sensing behavior in noncontinuous palladium films

Kiefer

Villanueva

Fargier

et al. 2010

Applied Physics Letters

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The morphological transition in ultrathin palladium ͑Pd͒ films around the percolation threshold and the related transition in hydrogen sensing behavior is investigated. We find that besides the transition from continuous to discontinuous Pd, an intermediate -semicontinuous-state must be considered. It shows hydrogen sensing features of both continuous and discontinuous film types, simultaneously. This study focuses on the discontinuous-semicontinuous transition. Experimental evidence is supported by studying the evolution of the electrical resistance with temperature, under hydrogen exposure and after thermal annealing. The results are highly relevant for the optimization of nanogap based hydrogen sensors.

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“…As a result the weak spots of the filament will rupture with an accelerating decrease of current, and this is the cause of catastrophic breakdown (in CD region) with showing VCNR region. In N-type switching, an increase in the bias voltage caused the current to reach a minimum value and then to increase again as shown in Figure 2 for 7.5 wt% V, Figure 3 for the thickness of 200 nm, respectively, as observed in planar discontinuous metal films [14]. The regions of BC, CD may be explained similarly but beyond this region as in Figure 2 may be explained by introducing the concept of trapping centers.…”

Section: Resultsmentioning

confidence: 83%

DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

Hossain

Islam

Khan

2011

ISRN Materials Science

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Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ∼8 × 10 −4 Pa. The deposition rate of the film was maintained at 2.052 nms −1 . Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at atmospheric pressure in room temperature. Switching characteristics of deposited Al/ZnTe:V/Cu structure as a memory device have been investigated in detail for various vanadium compositions, thicknesses of ZnTe:V films as well as various film temperatures, respectively. In all cases, it is seen that the metal/insulator/metal (Al/ZnTe:V/Cu) structures based on ZnTe:V can undergo an electroforming process and exhibit voltage-controlled negative resistance (VCNR) or a new switching process. It is also observed that the electric field, temperature, thickness, and dopant composition have important role in the switching characteristics. Switching characteristics have been interpreted by using a filamentary model. The switching effects of Al/ZnTe:V/Cu device may have important applications in the energy-oriented devices.

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Electrical conductivity in structurally inhomogeneous discontinuous metal films

Cited by 30 publications

References 1 publication

Electron transport in discontinuous metal thin films

Electron transport in discontinuous metal thin films

The transition in hydrogen sensing behavior in noncontinuous palladium films

DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

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