Electrical conductivity and dielectric properties of cadmium thiogallate CdGa2S4 thin films

El-Nahass, M.M.; El-Shazly, E. A. A.; El-Barry, A. M. A.; Omar, H. S. S.

doi:10.1007/s10853-011-5529-1

Cited by 21 publications

(4 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The presence of vacancies in OVCs yields relevant properties in comparison with their homologue AX, BX and ABX2 compounds, like higher compressibilities, [2][3][4] good performance as host materials 5,6 and suitable valence electron concentration, large second harmonic generation and extensive damage threshold for mid-IR nonlinear optics. 7,8 The most remarkable fields of application of OVCs, due to their wide band gap, high photosensitivity, bright photoluminescence and long-term stability of many parameters are photovoltaic cells 9 , optoelectronic devices 10 , temperature sensors 11 and optical filters. 12,13 In particular, CdGa2S4 has raised considerable attention in the field of nonlinear optics.…”

Section: Introductionmentioning

confidence: 99%

Vibrational properties of CdGa2S4 at high pressure

Gallego-Parra

Gomis

Vilaplana

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressureinduced phase transitions. These measurements have been complemented and compared with lattice-dynamics ab initio calculations including the TO-LO splitting at high pressures in order to provide a better assignment of experimental Raman modes. In addition, experimental and theoretical Grüneisen parameters have been reported in order to calculate the molar heat capacity and thermal expansion coefficient of CdGa2S4. Our measurements provide evidence that CdGa2S4 undergoes an irreversible phase transition above 15 GPa to a Raman-inactive phase, likely with disordered rocksalt structure. Moreover, the Raman spectrum observed on downstroke from 25 GPa to 2 GPa has been attributed to a new phase, tentatively identified as a disordered zincblende structure, that undergoes a reversible phase transition to the Raman-inactive phase above 10 GPa.

show abstract

Section: Introductionmentioning

confidence: 99%

Vibrational properties of CdGa2S4 at high pressure

Gallego-Parra

Gomis

Vilaplana

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…High pressure optical absorption coefficient and Raman scattering measurements for CdGa 2 Se 4 have been studied by Gomis et al [10]. Thermal evaporation technology is implemented for the preparation of CdGa 2 S 4 thin film by El-Nahass et al [11]. The elastic, electronic and optical properties of CdGa 2 X 4 (X=S, Se) compounds have been reported by Ma et al [12] using first principle method.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Analysis of CdGa<sub>2</sub>X<sub>4</sub> (X= S, Se): A Promising Material for Solar Cells

Kumar

Sahariya

Soni

et al. 2017

MSF

View full text Add to dashboard Cite

In this paper, the optoelectronic nature of the CdGa2X4 (X = S, Se) solar cell materials are examined using full potential linear augmented plane wave (FP-LAPW) method as embodied in WIEN2K code. In present computation, we have used most suitable modified Backe-Johnson (mBJ) potential under the framework of density functional theory (DFT). The calculated electronic properties like energy band structure and density of states spectra show that these materials exhibit a direct band gap (Γ–Γ) result of 3.22 eV and 2.36 eV for CdGa2S4 and CdGa2Se4 compounds, respectively. Absorption spectra for CdGa2X4 (X = S, Se) compounds have been studied and it has been found that above the band gap, absorption are taking place and it covers wide visible spectrum energy range. On the basis of calculated band gap, density of states and absorption coefficient spectra, it is found that these compounds can be suitably applicable in optoelectronic devices such as solar cell. The evaluated properties pose well agreement with available experimental data.

show abstract

“…On the other hand, using a thermal evaporation method experimentally, the thin films of CdGa 2 S 4 were provided and the temperature dependency of conductivity and dielectric properties of CdGa 2 S 4 films in the range of 303–383 K . Moreover, Ursaki et al have studied the vibrational spectra under pressure of A Ga 2 C 4 ( A = Cd, Zn; C = S, Se) compounds.…”

Section: Introductionmentioning

confidence: 99%

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa₂S₄ by DFT Approaches

Aliabad

Vaezi

Basirat

et al. 2017

Zeitschrift anorg allge chemie

View full text Add to dashboard Cite

The electronical and optical properties of CdGa 2 S 4 under high pressures were studied using the full potential linearized augmented plane wave (FP-LAPW) method within the GGA and mBJ exchange correlation potentials from 0.0 to 16.92 GPa. The obtained results show that the lattice constants, bandgap values, and optoelectronic properties are sensitive to applied external pressures. The mBJ results indicate that the bandgap increases and the static dielectric con-* Dr. H. A. Rahnamaye Aliabad 839 stants decrease with increasing the pressure. The two none zero dielectric tensor components show considerable anisotropy between the perpendicular and parallel components. The maximum absorption for x direction in all pressures takes place in vacuum UV region. Also, the plasma frequency shifts to the higher energies with increasing the pressure for application in optical devices. The calculated results by mBJ are in close agreement with the experimental values.

show abstract

Electrical conductivity and dielectric properties of cadmium thiogallate CdGa2S4 thin films

Cited by 21 publications

References 18 publications

Vibrational properties of CdGa2S4 at high pressure

Vibrational properties of CdGa2S4 at high pressure

Optoelectronic Analysis of CdGa<sub>2</sub>X<sub>4</sub> (X= S, Se): A Promising Material for Solar Cells

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa₂S₄ by DFT Approaches

Contact Info

Product

Resources

About

Electrical conductivity and dielectric properties of cadmium thiogallate CdGa2S4 thin films

Cited by 21 publications

References 18 publications

Vibrational properties of CdGa2S4 at high pressure

Vibrational properties of CdGa2S4 at high pressure

Optoelectronic Analysis of CdGa<sub>2</sub>X<sub>4</sub> (X= S, Se): A Promising Material for Solar Cells

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa2S4 by DFT Approaches

Contact Info

Product

Resources

About

Role of the Crystal Lattice Constants and Band Structures in the Optoelectronic Spectra of CdGa₂S₄ by DFT Approaches