Electrical conduction of thin metallic layers at high frequencies down to liquid helium temperatures

Hirsch, A.A.; Bazian, S.

doi:10.1016/0031-8914(64)90221-6

Cited by 35 publications

(7 citation statements)

References 6 publications

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“…The bulk, grain boundary and electrode processes can be resolved because they generally have significantly different RC time constants. This approach was employed by Hirsch and Bazian (1964) to study agglomerated films on glass substrates using the equivalent circuit in figure 7(c).…”

Section: Ac Impedance Analysismentioning

confidence: 99%

Agglomeration of thin platinum films on a zirconia substrate

Maskell

Sammes

Steele

1987

J. Phys. D: Appl. Phys.

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Thin films of Pt (100-200 nm) were sputtered onto a zirconia substrate and annealed for several days at 700 "C. Agglomeration occurred accompanied by loss of continuous electronic conduction for surface coverages below a critical level. AC impedance analysis showed that at elevated temperatures conduction across the surface involved a mixed mechanism of electronic conduction in the metallic islands and ionic conduction in the electrolyte between the islands.

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Section: Ac Impedance Analysismentioning

confidence: 99%

Agglomeration of thin platinum films on a zirconia substrate

Maskell

Sammes

Steele

1987

J. Phys. D: Appl. Phys.

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“…The frequency dependence of the low field conductivity has been studied in discontinuous films [143][144][145] and in cermets. behavior of the frequency dependence of the real part o~a c of the complex conductivity σ 0Μ of cermets is illustrated in Fig.…”

mentioning

confidence: 99%

Granular Metal Films

Abeles

1976

Applied Solid State Science

215

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“…On the other hand, other investigators have studied the dependence of r p of DMFs on x under different conditions like varying both of the temperature of films [12,13] and the pressure of gases around them [14] and found that r p decreases with the increase in x and they accounted for their results by adapting the equivalent electric circuit proposed by Hirsch and Bazian [20]. It was claimed that [21] beside the direct transfer of electrons between islands there are other electrons that indirectly transferred via hopping through the localized sites (states) that exist on the substrate surface between the two islands.…”

Section: Discussionmentioning

confidence: 99%

A. c. conductance of γ-irradiated discontinuous platinum films

Bishay

El‐Gamal

2013

J Mater Sci: Mater Electron

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Four films (A, B, C and D) of discontinuous platinum films (D(Pt)Fs) whose mass thicknesses (d m ) are 10, 20, 30 and 40 Å , respectively were deposited onto Corning 7,059 glass substrates at ambient temperature via the thermal evaporation technique. Each film was c-irradiated by different doses, namely, 100, 200, 300, 500 and 700 Gy; this was done by using 137 Cs (0.662 MeV) radiation source of dose rate 0.5 Gy/min. For each dose, the d. c. and total resistance of the Pt films were measured; in that way the a.c. conductance G ac of the films could be determined. It was found that: (1) G ac increases as the dose, d m and the angular frequency x of the voltage imposed on the film increases (2) the c-irradiation has modified the shape of islands such that they are elongated parallel to the substrate surface and thus the inter-island spacings have decreased. This elongation has been confirmed via micrographs taken by the atomic force microscope. To account qualitatively for the results of G ac it was assumed that, the a.c. conductance of D(Pt)Fs is due to the hopping of electrons through the sites which exist on the substrate surface between two adjacent islands.

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Electrical conduction of thin metallic layers at high frequencies down to liquid helium temperatures

Cited by 35 publications

References 6 publications

Agglomeration of thin platinum films on a zirconia substrate

Agglomeration of thin platinum films on a zirconia substrate

Granular Metal Films

A. c. conductance of γ-irradiated discontinuous platinum films

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