Electrical conduction in thin thermally nitrided SiO2 (nitroxide)

Cheng, X.R.; Liu, B.Y.; Cheng, Yung‐Chen

doi:10.1016/0169-4332(87)90099-7

Cited by 10 publications

(4 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…30,31) PF conduction has not been reported for thin film SiO 2 , either deposited or prepared by thermal oxidation of c-Si. However, it has been reported for nitrided SiO 2 , sometimes referred to a ''nitroxide'', 32) supporting the correlation been between PF conduction and the bonding of N in Si 3 N 4 and Si oxynitride alloys. The difference between N 2p to 2p Ã and O 2p to 2p Ã final states is correlated with differences in the extent of bond-angle stabilization of the local bonding of O in SiO 2 and N in Si 3 N 4 and in the Si oxynitride alloys as well.…”

Section: Introductionmentioning

confidence: 83%

“…This provides a ''pathway'' for TAT processes and Poole-Frenkel transport, in Si 3 N 4 and extending to Si oxynitride alloys as well. [30][31][32] The N-atom p to p Ã transition is also responsible for higher levels of NBTI compared with SiO 2 . 36,37) When the N-content is reduced in Si oxynitride alloys, e.g., 50% SiO 2 and 50% Si 3 N 4 , the NBTI is reduced.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO₂, Si₃N₄, and Si Oxynitride Alloy Thin Films

Lucovsky

2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This article, the second of a two-part sequence, combines X-ray absorption spectroscopy (XAS) and many-electron theory to develop a model for intrinsic bonding defects in non-crystalline and nanocrystalline thin films used primarily as gate dielectrics for field effect transistors and related devices. In SiO2 these defects are O-atom vacancies and their spectral features in O K pre-edge spectra are assigned to multiplet transitions based on a d2 model for the electrons in a neutral O-vacancy site. This model is applied to (i) non-crystalline (nc-) SiO2, and extended to (ii) Si oxynitride alloys, (nc-SiO2)1-x (Si3N4) x , and nc-Hf Si oxynitrides. As in Part I, this relies on Tanabe–Sugano (TS) energy diagrams to identify spin-allowed X-ray transitions and negative ion states. Differences between band edge states in (i) nc-SiO2, and (ii) nc-Si3N4 explain quantitative differences in trapping and trap-assisted tunneling. Preliminary results for nc-GeO2 films prepared by remote-plasma-enhanced chemical vapor deposition shows these films exhibit surface stability similar to nc-SiO2, suggesting that local nc-GeO2 bonding involves the same 4-fold Ge, and 2-fold O coordination as Si and O in nc-SiO2.

show abstract

Section: Introductionmentioning

confidence: 83%

Section: Discussionmentioning

confidence: 99%

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO₂, Si₃N₄, and Si Oxynitride Alloy Thin Films

Lucovsky

2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Plasmadeposited silicon nitride is usually formed from the reaction of silane (Sill,) with ammonia, nitrogen, or mixtures of both (1)(2)(3)(4). Plasma-deposited silicon carbide (SiCxHy) films are of interest as window-side layers in amorphous silicon solar cells (5) and as heat-, wear-, and corrosionresistant coatings (6,7). Large stresses that result in poor adhesion or film cracking due to thermal mismatches make low temperature (i.e., plasma) deposition for the latter application attractive.…”

Section: Discussionmentioning

confidence: 99%

“…In our work, the growth process and the electrical properties of the thermally nitrided SiO2 in a pure ammonia ambient have been studied; the results of the latter are discussed elsewhere (6,7). By applying various processing conditions we have obtained different depth profiles of nitrogen mentioned above in the resulting nitrided films.…”

mentioning

confidence: 99%

The Influence of Processes on Composition of Thermally Nitrided SiO2 Film

Liu

Cheng

Liu

1988

J. Electrochem. Soc.

View full text Add to dashboard Cite

The influence of process conditions, involving both oxidation and nitridation, on the results of nitridation of SiO2 have been investigated. The initial oxides grown by LP, dry and wet oxidations to 200-500A have been nitrided in either a directly heated reactor or an RF-heated reactor-Systematic AES analyses show that by utilizing appropriate processing techniques, different distributions of nitrogen and nitrogen-oxygen ratios can be obtained. The results demonstrate that both a low oxidation rate and a low initial nitridati0n rate will give a higher amount of nitrogen and a higher nitrogenoxygen ratio in the nitrided film. The Auger results also indicated that at the early stage of nitridation Si-O bonds were partially broken and reactions between pure and/or partially unbonded Si and nitridizing agents had occurred. The results of POSt nitridation annealing show that the nitrogen in a nitrided oxide film can be further redistributed at an elevated temperature, and the nitridation reactions in the surface and bulk regions are reversible. A multilayer model is proposed to explain the kinetics of nitridation. With this model, the different nitrogen profiles and nitrogen-oxygen ratios for different process conditions are clarified and the influence of the processes can be predicted qualitatively.

show abstract

Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys

Lucovsky

Miotti

Bastos

2011

Vibronic Interactions and the Jahn-Teller Effect

View full text Add to dashboard Cite

Electrical conduction in thin thermally nitrided SiO2 (nitroxide)

Cited by 10 publications

References 11 publications

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO₂, Si₃N₄, and Si Oxynitride Alloy Thin Films

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO₂, Si₃N₄, and Si Oxynitride Alloy Thin Films

The Influence of Processes on Composition of Thermally Nitrided SiO2 Film

Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys

Contact Info

Product

Resources

About

Electrical conduction in thin thermally nitrided SiO2 (nitroxide)

Cited by 10 publications

References 11 publications

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO2, Si3N4, and Si Oxynitride Alloy Thin Films

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO2, Si3N4, and Si Oxynitride Alloy Thin Films

The Influence of Processes on Composition of Thermally Nitrided SiO2 Film

Many-Electron Multiplet Theory Applied to O-Vacancies in (i) Nanocrystalline HfO2 and (ii) Non-crystalline SiO2 and Si Oxynitride Alloys

Contact Info

Product

Resources

About

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO₂, Si₃N₄, and Si Oxynitride Alloy Thin Films

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO₂, Si₃N₄, and Si Oxynitride Alloy Thin Films