Electrical Conduction in Bi<sub>40</sub>Sb<sub>60</sub> Alloy Thin Films

Das, V. Damodara; Meena, N.

doi:10.1002/pssb.2221040248

Cited by 5 publications

(5 citation statements)

References 2 publications

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“…The grain boundary barrier activation energy decreases with increasing thickness. Semi-conducting behaviour in thin film of Bi-Sb alloys had observed as reported in [14,15] while, in the bulk alloy of this composition shows a metallic behaviour. The carrier mobility and concentration were calculated from the electrical conductivity and low field Hall effect and magneto-resistance.…”

Section: Introductionmentioning

confidence: 53%

“…It has small thermal heat capacity, many-valley nature of the energy-spectrum of the current carriers, the high mobility and the resistivity of Bi-Sb thin films shows a small temperature dependence between liquid nitrogen and room temperature [3,5]. Bi-Sb is an efficient thermoelectric material at low temperature [3,4,6].The constituents of Bi 0.99 Sb 0.01 thin films have been the subject of many studies since it is regarded as one of the constituent materials of many binary and ternary compounds used in electronic devices. Previous studies [7][8][9][10][11][12] revealed that Bi-Sb thin film form crystallized in the hexagonal system and they also found that, the mean grain size increased with increasing the film thickness and decreased with Sb content.…”

Section: Introductionmentioning

confidence: 99%

“…Previous studies [7][8][9][10][11][12] revealed that Bi-Sb thin film form crystallized in the hexagonal system and they also found that, the mean grain size increased with increasing the film thickness and decreased with Sb content. Many studies [7,[12][13][14][15][16] revealed that with decreasing film thickness, the resistance increases regularly, though as the thickness reaches certain magnitude, ρ starts to drop manifesting an anomalous size effect.…”

Section: Introductionmentioning

confidence: 99%

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Bi0.99Sb0.01 Thin Film Transport Properties and Size Effect

2010

Egyptian Journal of Solids

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Bi 0.99 Sb 0.01 thin films were vacuum deposited on glass substrates at room temperature. X-ray structural studies were performed. The thickness dependence of both the dc electrical resistivity and the Hall coefficient were carried out at room temperature over a thickness range from 30 nm to 200 nm. The type of conduction, the concentration and the mobility of charge carriers were revealed. Analysis incorporating the electrical resistivity and the Hall effect data led to the determination of the specular and non-specular size-effect parameters. Parameters such as the bulk resistivity (ρ o), bulk mean free path (λ o), grain-boundary transmission coefficient (p-), external surface parameters (U), surface scattering factor (p) and grain-boundary parameter (V) were all evaluated without using any adjusting parameters. Beside the background contribution to the film resistivity, an estimation of the contribution of the surface and grain boundary to the film resistivity were also carried out.

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Section: Introductionmentioning

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Bi0.99Sb0.01 Thin Film Transport Properties and Size Effect

2010

Egyptian Journal of Solids

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“…Das and Meena [5] studied the properties of bismuth-antimony alloy containing 60% antimony, in the form of thin films, in the temperature range 100-500 K. They observed semimetallie behaviour for large thicknesses (1625-5050/~) and semicondueting behaviour for small thickness (340 and 830 A).…”

mentioning

confidence: 97%

“…All the previous studies were carried out in the low-temperature range (4'300 K) except for the work of Das and Meena [5], so the aim of the present work is to study the behaviour of the electrical resistivity of some bismuth-antimony alloys in the temperature range 300-500 K as a function of the antimony composition up to 20%.…”

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confidence: 99%

The electrical resistivity of Bi1−xSbx alloys

El-Osairy

1990

Journal of Thermal Analysis

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The electrical resistivity of some Bil-xSbx alloys containing 2-20% of antimony was measured in the temperature range 300-500 IC The measurements suggest that the behaviour of the electrical resistivity for all samples throughout the temperature range studied is semimetallic.Bismuth is a semimetal with a carrier concentration of about 10 TM cm "3. The addition of group V elements such as antimony is expected to modify the band structure of bismuth as well as change the carrier concentration. The electrical properties of bismuth-antimony alloys have been investigated by many workers.Jain [1] made the first systematic and detailed study of a large number of bismuth-antimony alloys. He found that alloys containing less than 5% antimony exhibit overlapping between valence and conduction bands and are therefore semimetals. In alloys containing between 5% and 40% antimony, the resistivity increases as the temperature is lowered below 100 K, and Jain deduced that these alloys are intrinsic semiconductors with small energy gaps. This behaviour was attributed to the removal of the overlap between the conduction and the valence bands in bismuth due to antimony addition. The findings of Goldsmid [2] are consistent with those of Jaln.Shoenberg and Uddin [3] suggest that the Fermi energy decreases on the addition of antimony. Heine [4] has pointed out that a decreased Fermi energy implies a decreased overlap and that, consequently, bismuth-antimony alloys may become semiconducting at concentrations of antimony greater than 4%.

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