Electrical Conducting Behavior of W- Doped VO2 Thin Films / La0.5Sr0.5CoO3Heterostructure

Abstract

Abstract-W-doped vanadium oxide thin films were obtained by sol-gel spin coating process on the pre-heat treated silicon wafer. The precursor for thin film coating is prepared with vanadium methanol solution. These films were post annealed at 580ºC for 30 min under controlled air pressure. The average thickness of the films was about 60 nm. The predominant phase of the films is monoclinic VO 2 from Raman spectra analysis. These thin films exhibit a metal-semiconducting transition. The transition temperature was lowered from 68ºC to 34ºC by doping with tungsten cation with 15%W.