Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs

Havare, Ali; Okur, Salih; Yağmurcukardeş, Nesli; Can, Mustafa; Aydın, Hasan; Seker, Mavise; Demiç, Şerafettin

doi:10.12693/aphyspola.123.456

Acta Phys. Pol. A

2013

DOI: 10.12693/aphyspola.123.456

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Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs

Ali Havare

Salih Okur

Nesli Yağmurcukardeş

et al.

Abstract: In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentvoltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modied and unmodied ITO were performed via atomic force microscopy.

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“…Aromatic SAMs were used to modify anode/hole transport layer interface in order to achieve preferable barrier alignment and charge carrier injection. 19,20 Additionally, SAM modification of graphene also leads to electronic passivation of graphene edges and defects, thus might be responsible for a strong doping at the interface due to high acidity of the protons. 21 Although there have been various studies to enhance Schottky diodes depend on the graphene layers, researches on SAMs modification of silicon and graphene interface has been insufficient.…”

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confidence: 99%

Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance

Yağmurcukardeş

Aydın

Can

et al. 2016

ECS J. Solid State Sci. Technol.

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Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height φ B values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively. Graphene is a one-atom thick sheet of sp 2 bonded carbon atoms that are arranged in a honeycomb crystal lattice with exceptional properties. At room temperature electron mobility reached 2.5 × 10 5 cm 2 /V.s. 1 Young's modulus of 1 TPa and intrinsic strength of 130 GPa are very close to that were predicted by theory.2 Very high thermal conductivity (above 3000 WmK −1 ), 3 low optical absorption (∼2.3%), 4 ability to sustain high electric current densities 5 and be suitable to chemical functionalization [6][7][8] are other important properties of graphene that attract great attention. When graphene is transferred onto semiconductors such as GaAs, GaN, SiC and Si; it forms Schottky junctions.9-12 More efficient and stable solar cells and Schottky barrier devices will be achieved by the development of surface improvement, doping and functionalization. 13,14 The electrical transport performance of the fabricated Schottky diode is directly based on interface properties between substrate and graphene layer. 15Chemical Vapor Deposition (CVD) is promising technique for large area and high quality graphene growth. 16 In this technique, carbon precursors (methane, ethylene) are deposited carbon atoms onto the surfaces of various transition metals such as Nickel and Copper under high temperatures and form graphene. [16][17][18] Self-assembled monolayers (SAMs) are well-oriented molecular structures that are formed by the adsorption of an active surfactant on a substrate surface. Aromatic SAMs were used to modify anode/hole transport layer interface in order to achieve preferable barrier alignment and charge carrier injection. 19,20 Additionally, SAM modification of graphene also leads to electronic passivation of graphene edges and defects, thus might be responsible for a strong doping at the interface due to high acidity of the protons. 21 Although there have been various studies to enhance Schottky diodes depend...

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mentioning

confidence: 99%

Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance

Yağmurcukardeş

Aydın

Can

et al. 2016

ECS J. Solid State Sci. Technol.

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Development of a Schottky barrier diode using molecular network of 1-alkyl-2-(arylazo) imidazole prepared by Langmuir–Blodgett technique

Singha

Mallick²,

Chakraborty

et al. 2021

Journal of Physics and Chemistry of Solids

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Electrical transport mechanisms and photovoltaic behavior of 2-(2-furanylmethylene) propanedinitrile/p-Si heterojunction

Ali

Soliman

Eid

et al. 2013

Materials Chemistry and Physics

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Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs

Cited by 3 publications

References 14 publications

Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance

Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance

Development of a Schottky barrier diode using molecular network of 1-alkyl-2-(arylazo) imidazole prepared by Langmuir–Blodgett technique

Electrical transport mechanisms and photovoltaic behavior of 2-(2-furanylmethylene) propanedinitrile/p-Si heterojunction

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