Electrical Characterizations of Lead Free Sr and Sn Doped BaTiO3 Ferroelectric Films Deposited by Sol-Gel

Carru, Jean-Claude; Fasquelle, Didier

doi:10.5772/16485

Cited by 5 publications

(8 citation statements)

References 32 publications

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“…The variation in band gap also followed similar trend as crystallite size. In literature, various reports suggest that the direct bandgap decreases by increasing the crystallite size and vice versa, which contradicts our present result [55,56].…”

Section: Determination Of Crystallite Sizecontrasting

confidence: 99%

Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO₃ prepared by Sol-Gel chemical route

et al. 2020

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This paper discusses the structural, microstructure, optical and electrical properties of perovskite CaSnO3 modified by Ti doping. Single phase of Ti-doped CaSnO3 was obtained using sol-gel method followed by calcination at 750 °C. X-ray diffraction and Fourier transform infrared spectroscopy techniques were used to probe Ti in the samples. Value of lattice parameters of all samples obtained from Rietveld refinement initially decreases with Ti-doping up to CSO5 and then slight increases for CSO7, due to difference in ionic radius between Ti4+ (0.61 Å) and Sn4+ (0.69 Å) and surface defect respectively. Using SEM, an average grain size of sintered samples was determined in the range of (0.38–1.02) μm. Because of the presence of dipole at large distances, the dielectric constant and tangent loss of samples was found to be independent of temperatures up to 300 °C, making it a potential candidate for thermally stable capacitor application. Nevertheless, the Arrhenius type conduction mechanism was found to be active in all samples with activation energy (0.41–0.68) eV, indicated that the conduction in samples occurred by transferring electrons between degenerate sites of Sn (Sn4+/Sn3+/Sn2+) and Ti (Ti4+/Ti3+/Ti2+). The P-E loop of CSO5 sample shows higher saturation polarization and coercive field than CSO0, making it a potential candidate for memory device application.

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Section: Determination Of Crystallite Sizecontrasting

confidence: 99%

Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO₃ prepared by Sol-Gel chemical route

et al. 2020

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“…They also reported dielectric and ferroelectric properties for BSTS polycrystalline pseudocubic thin films prepared using soft chemical method [29]. Further, it was noticed that only few reports exist in literature about the local piezoelectric properties measurement on BST [30,31] and BSTS ceramics [32] at nanoscale level. In general, nanoscale science (nanoscience) and nanotechnology best describe the materials' properties at nanometer length scale, which is one billionth (10 −9 ) of a meter.…”

Section: Introductionmentioning

confidence: 98%

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba_0.50Sr_0.50)(Ti_0.80Sn_0.20)O₃ Thin Films Prepared Using Chemical Solution Deposition

Puli

Adireddy

Pradhan

et al. 2015

Journal of Nanomaterials

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Nanoscale switchable ferroelectric (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD) spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+and Sn4+cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM) technique has been employed to acquire out-of-plane (OPP) piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

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“…Our research project aims at developing innovating gas sensors containing lead-free oxides and dedicated to the detection of flammable gases and protection against toxic risks. Our preliminary work enabled us to optimize the conditions of elaboration of lead-free thin films (BaSrTiO 3 and BaTiSnO 3 ) and showed that the pyroelectric properties of these ferroelectric oxides can be used for applications such as optoelectronic gas detection cells [1][2][3][4]. Furthermore, first semiconductor sensors made from BST films gave some very encouraging results [5].…”

Section: Introductionmentioning

confidence: 99%

Elaboration and characterization of doped barium titanate films for gas sensing

Romh¹,

Fasquelle²,

Députier³

2014

AIP Conference Proceedings

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International audienceBarium titanate (BaTiO3) thick films were prepared from commercial powder to develop and optimize the filmelaboration. Then, BaTiO3was doped by strontium and iron to increase the conductivity by a double substitution on siteA and B of the perovskite structure in view to develop semiconductor gas sensors. Film inks were prepared by mixing BTand BSTF powder with an organic vehicle, using a ratio of 50:50; 60:40, respectively and deposited on aluminasubstrates. The BT and BSTF films were sintered at 1100°C for 2h. The structural and physical properties of the filmshave been studied by using X-ray diffraction (XRD) and scanningelectron microscope (SEM). The dielectricmeasurements showed a huge increase in the a.c. conductivity for the BSTF films, by a factor of 10000 at low frequency,when the temperature ranges from 25°C to 500°C

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Electrical Characterizations of Lead Free Sr and Sn Doped BaTiO3 Ferroelectric Films Deposited by Sol-Gel

Cited by 5 publications

References 32 publications

Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO₃ prepared by Sol-Gel chemical route

Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO₃ prepared by Sol-Gel chemical route

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba_0.50Sr_0.50)(Ti_0.80Sn_0.20)O₃ Thin Films Prepared Using Chemical Solution Deposition

Elaboration and characterization of doped barium titanate films for gas sensing

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Electrical Characterizations of Lead Free Sr and Sn Doped BaTiO3 Ferroelectric Films Deposited by Sol-Gel

Cited by 5 publications

References 32 publications

Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO3 prepared by Sol-Gel chemical route

Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO3 prepared by Sol-Gel chemical route

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3 Thin Films Prepared Using Chemical Solution Deposition

Elaboration and characterization of doped barium titanate films for gas sensing

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Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO₃ prepared by Sol-Gel chemical route

Structural, microstructure, optical, and electrical properties of Ti-doped CaSnO₃ prepared by Sol-Gel chemical route

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba_0.50Sr_0.50)(Ti_0.80Sn_0.20)O₃ Thin Films Prepared Using Chemical Solution Deposition