Electrical characterization of reactively sputtered TiN diffusion barrier layers for copper metallization

Kaufmann, Ch.; Baumann, J.; Geßner, Thomas; Raschke, T.; Rennau, M.; Zichner, N.

doi:10.1016/0169-4332(95)00133-6

Cited by 9 publications

(6 citation statements)

References 22 publications

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“…Thetantalum (Ta) and tantalum nitride (TaN) [3] barrier layers have been widely used as diffusion barriers and thin film resistors in the microelectronics industry due to their good diffusion barrier properties [1,4,5] and relatively stable electrical properties [6][7][8]. TiN have also received much attention as diffusion barrier [9][10][11] due to its mechanical stability [9,12] and low resistivity [10,11]. Furthermore, multi-component composite coatings, multilayer coatings and super-lattice coatings have been introduced [6,[13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

Chung¹

2018

J Nanosci Adv Tech

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The combination of TaN and TiN is expected to create a range of muti-functional materials because of the composition dependent resistivity and thermal coefficient of resistance for the applications in microelectronics and thermal sensors industry. In this article, adding Ti into the TaN thin film has been investigated by various sputtering conditions to create the possibility with varied electrical property which can be good for resistor and sensor application. A series of TaN (0Ti%) and Ta-TiN thin films were deposited by DC magnetron sputtering. The microstructure, composition, morphology and electrical properties of the films were characterized using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy, scanning electron microscopy and four point probe method. The crystal structures of Ta, Ti and Ta-Ti alloys are based on bcc α-Ta and bcc β-Ti. XRD patterns showed TaN is qusi-amorphous structure with high N 2 flow ratio of 20% while Ta-TiN is preferred to form polycrystalline phase. The resistivity of both kinds of thin films decreases with increasing temperatures for the nature of negative temperature coefficient of resistance (N-TCR). The magnitude of both resistivity and N-TCR increases with increasing N 2 flow ratio. The wide range of resistivity and TCR can be used for applications in thermally based micro sensors (high TCR)and thin-film resistor (low TCR).

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Section: Introductionmentioning

confidence: 99%

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

Chung¹

2018

J Nanosci Adv Tech

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“…New applications of nitrides compounded of transitional elements, such as ZrN, TiN, HfN, and TaN, become an important subject [1][2][3][4][5][6][7][8]. Their advantage properties including anti-wearing, low resistivity, low diffusion coefficient and dielectric constant, are very suitable as the layer for diffusion barriers of Cu metallization to obstruct the chemical reaction between semiconductor materials and metals [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Effect Analysis of Ar-N<sub>2</sub> Flow Rates on ZrN<sub>X</sub> Film by Pulsed Magnetron Sputtering Using Design of Experimental Method

Wen

Chang

et al. 2011

AMR

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The various nitrogen gas (N2) flows for depositing zirconium-nitride (ZrN) films on the substrate of a p-type (100) silicon wafer are investigated through reactive magnetron sputtering by a pulsed-DC power. The results, based on the design of experimental (DOE) method, indicate that the deposition effect of the ZrNx film is obviously affected by various flow rates of nitrogen gas at the specific pulsing duty cycles. The crystal orientation of the zirconium-nitride film has a less order microstructure which is similar to an amorphous microstructure. Although the composition ratio of chemical elements is not identical in Zr and N, the surface roughness, grain size, and resistivity are the better feature. The deposition rate is inversely proportional to the nitrogen flow rate and the chamber pressure is also an important factor. The basic effect of N2 flow rate on the surface roughness is rougher when more nitrogen gas is supplied. The resistivity of ZrNx thin film has a positive relationship to N2 flow rates at the reactive vacuum chamber.

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“…Gryaznov et al suggested that intermediate layers of high-melting metals such as tungsten, magnesia, and zirconia less than 1 μm thick increased the lifetime at high temperature . Also, titanium nitride (TiN) films are already successfully used as diffusion barriers in the semiconductor industry. − It is known that TiN has a high melting point (3223 K) and is stable in a nonoxidative atmosphere…”

Section: Introductionmentioning

confidence: 99%

“…7 barriers in the semiconductor industry. [8][9][10] It is known that TiN has a high melting point (3223 K) and is stable in a nonoxidative atmosphere. 11 Considering these points, a thin layer of TiN by the sputterng method was applied as a diffusion barrier.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Palladium Alloy Composite Membranes with a Diffusion Barrier for Hydrogen Separation

Nam

Lee

2004

Ind. Eng. Chem. Res.

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Pinhole-free Pd/Ni alloy composite membranes with a diffusion barrier have been fabricated on mesoporous stainless steel supports by vacuum electrodeposition. To improve the structural stability of Pd alloy/Ni-316-L stainless steel (SUS) composite membranes, a thin intermediate layer of TiN by a sputtering method was introduced as a diffusion barrier between the Pd/Ni active layer and a modified SUS substrate. The composition and phase structures of the alloy film were studied by energy-dispersive spectroscopic analysis and X-ray diffractometry; the typical Pd/Ni plating had a composition of 82% Pd and 18% Ni. The electron probe microanalyzer profiling analysis indicated that the improved membranes were structually stable. The Pd/Ni alloy composite membrane with a diffusion barrier of TiN yielded a high separation performance for hydrogen. The composite membrane with a diffusion barrier of TiN shows very good stability under the mixture gas of 50% H 2 /50% N 2 for an operation time of more than 60 days. The purity of hydrogen can be raised from around 99.7 to 99.9% or above.

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Electrical characterization of reactively sputtered TiN diffusion barrier layers for copper metallization

Cited by 9 publications

References 22 publications

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

Effect Analysis of Ar-N<sub>2</sub> Flow Rates on ZrN<sub>X</sub> Film by Pulsed Magnetron Sputtering Using Design of Experimental Method

Preparation and Characterization of Palladium Alloy Composite Membranes with a Diffusion Barrier for Hydrogen Separation

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