Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

Djezzar, Boualem; Amrouche, Abdelwaheb; Smatti, A.; Kachouane, Mouloud

doi:10.1109/icm.1998.825582

Cited by 1 publication

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References 14 publications

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“…A radiação (Gamma), mesmo que em baixas doses [94], é uma das causas mais comuns de aumento da carga de interface ao longo do ciclo de vida do dispositivo. A eletrônica em geral torna-se obsoleta num máximo de 5 anos [95] e por isso é normalmente substituída antes da degradação.…”

Section: Variação Da Carga De Interfaceunclassified

Análise das propriedades básicas do sic VDMOSFET (WBG) para aplicações de tração automotiva

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The vehicular fleet around the world is going through an enormous transition in its energetic matrix, mostly because governments around the globe are concerned about pollution. This paper focus on the research of Wide Band Gap (WBG) Silicon Carbide (SiC) Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET), concerning to its use in electric vehicles, through manufacturer datasheet data and TCAD simulation analysis. Three main parameters were addressed: interface charge density, channel doping concentration density and gate to channel overlap/underlap. For each of the parameters, the IDS x VDS curves were traced for several values. Threshold voltage (Vth), maximum transconductance (max. gm) and subthreshold slope (S) were analyzed. This work describes in detail the device characteristics and mathematical models that are needed for TCAD simulation. This work shows the importance of power electronics for electric vehicles (EVs), what is the current and future EVs` need, and highlights the advantages that the SiC VDMOSFET presents. The analyzed data show that the threshold voltage and subthreshold slope increase with the increase on channel dopant concentration. As for the increase interface charge, it was observed that the threshold voltage decreases, and that the same occurs when there is a gate underlap. The maximum transconductance deteriorates with the increase in the channel doping concentration in greater level when compared with the maximum transconductance deterioration caused by the interface charge increase. However, gate underlap drastically deteriorates the maximum transconductance, and subthreshold slope increases as the gate underlap increases.

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Section: Variação Da Carga De Interfaceunclassified

Análise das propriedades básicas do sic VDMOSFET (WBG) para aplicações de tração automotiva

Feitosa¹

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show abstract

Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

Cited by 1 publication

References 14 publications

Análise das propriedades básicas do sic VDMOSFET (WBG) para aplicações de tração automotiva

Análise das propriedades básicas do sic VDMOSFET (WBG) para aplicações de tração automotiva

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