Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

“…These results are more consistent with the results achieved by Victorovitch et al [29] and Ayyildiz et al [30]. Based on the explanation reported in references [29,30], the large differences between the interface state density values obtained from the C− f , The variation of interface state density (NSS) and relaxation time (τ ) as a function of EC − ESS for the Ir/Ru/n-InGaN SBD at room temperature. G− f and I−V characteristics may be due to the local trap-density effect at the oxide-semiconductor interface.…”

“…The traps are effectively concentrated across the current parts; I−V characteristics provide the determination of the local density of traps in the areas crossed by the current. Hence, the average density of traps determined from admittance measurements can be significantly lower than the local density [29,30] (by about three orders of magnitude). The other important parameter for the Schottky devices is series resistance (R S ).…”

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

“…Over the past few decades, metal-semiconductor (MS) contacts are one of the most widely used rectifiers in the microelectronics industry [2,3]. The fabrication of these MS structures plays a crucial role in developing some useful devices in technology [4]. Due to the technological importance of Schottky junctions, a full understanding of the nature of their electrical characteristics is required [5][6][7].…”

Effects of annealing temperature on electrical and structural properties of Mo/n‐InP (100) Schottky contacts

“…For the sample annealed at 300 • C, the peaks for InP 3 (223) and MoP (001) appeared, whereas the peak for InP 3 (228) disappeared (Fig. 6(b)).…”