Electrical characterization of megabit DRAMs. 11. Internal testing

Kölzer, J.; Otto, J.

doi:10.1109/54.107204

Cited by 13 publications

(2 citation statements)

References 17 publications

(2 reference statements)

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“…the routinely applied recording of faint light generated by electroluminescence from silicon devices, is unique in terms of universality. Compared to complementary contactless, non-destructive testing methods it is more likely to be a 'stand alone' approach than the others; however, it remains part of a more comprehensive analysis scenario (Kolzer and Otto 1991). The applications cover a broad range between semiconductor research and process, device physics and automated testing.…”

Section: Discussionmentioning

confidence: 99%

“…In principle the occurrence of light does not necessarily indicate a failure and not all failure mechanisms emit light. Nevertheless, the emission site gives indispensable information, often in combination with other complementary analysis techniques (De Kort 1989, Kolzer and Otto 1991, Vaughan 1991, Bossmann et al 1992. approximately 1 pm.…”

Section: Laterally Resolved Measurementsmentioning

confidence: 99%

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Fundamentals of light emission from silicon devices

Deboy

Kölzer

1994

Semicond. Sci. Technol.

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The fundamentals of light-emitting phenomena from silicon semiconducting material are presented from an experimental rather than a theoretical point of view. The following aspects are considered in detail. In the first place, laterally resolved measurements give information about the distribution of emitted light, which has been generated by an excited radiative system. Secondly, spectrally resolved experiments enable a distinction to be made between different current transport mechanisms and permit discussion of underlying physical concepts. Thirdly, some fundamental emission mechanisms are discussed on the basis of the dependency of the electroluminescence intensity on such external parameters as temperature and current. Finally, the applicability of these mechanisms with respect to reliability physics, design verification and failure.analysis of semiconducting'devices is outlined and the state of the art of emission microscopy is reviewed.

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Section: Discussionmentioning

confidence: 99%

Section: Laterally Resolved Measurementsmentioning

confidence: 99%