Electrical characterization of InAs/GaAs quantum dots by frequency spectroscopy

Engström, Olof; Eghtedari, Ali; Kaniewska, M.

doi:10.1016/j.msec.2006.09.026

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…1, and in a corresponding investigation of capacitance spectroscopy on InAs/GaAs quantum dots. 19 For the case of MOS interfaces, this would require more advanced assumptions about shapes and capture cross section distributions to be used in the model equations, which would hide the essential features of the present reasoning. The curve fittings for frequency and temperature dependencies of capture cross sections, as shown in Figs.…”

Section: Discussionmentioning

confidence: 99%

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Engström

Raeissi

Piscator

2008

Journal of Applied Physics

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Using a method based on the frequency dependence of capacitance, cross sections for electron capture into energy states at the interlayer/silicon interface have been investigated for HfO2 that is deposited on silicon by reactive sputtering. We find that the capture cross sections are thermally activated and steeply increase with increasing energy depth. Both features can be attributed to the same physical origin, indicating vibronic trap properties, where the capture mechanism is governed by multiphonon processes.

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Section: Discussionmentioning

confidence: 99%

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Engström

Raeissi

Piscator

2008

Journal of Applied Physics

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Confined energy states in quantum dots detected by a resonant differential capacitance method

Engström

Kaniewska

Kaczmarczyk

2009

Applied Physics Letters

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A novel method is demonstrated for revealing the presence of confined energy states in quantum dots. The samples used are Schottky diodes with quantum dots inserted in a plane inside its depletion region. By measuring the voltage derivative of the differential diode capacitance and plotting the data as contour diagrams on a voltage versus temperature plane, the confined charge carrier states are visualized as peaks. To confirm this interpretation, experimental data are compared with theory based on statistics earlier used for understanding data from deep level transient spectroscopy on the same type of samples.

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Effect of neutron irradiation on the capacitance hysteresis in GaAs Schottky diodes with self-assembled InAs quantum dots

Gubanov¹,

Schramm²,

Polojärvi³

et al. 2013

J. Phys. D: Appl. Phys.

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Electrical characterization of InAs/GaAs quantum dots by frequency spectroscopy

Cited by 4 publications

References 10 publications

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Confined energy states in quantum dots detected by a resonant differential capacitance method

Effect of neutron irradiation on the capacitance hysteresis in GaAs Schottky diodes with self-assembled InAs quantum dots

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